| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Katerski, Atanas
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Topics
Publications (9/9 displayed)
- 2024An Alternative Chlorine-Assisted Optimization of CdS/Sb2Se3 Solar Cellscitations
- 2023Combinative solution processing and Li doping approach to develop p-type NiO thin films with enchanced electrical propertiescitations
- 2020Application of ultrasonic sprayed zirconium oxide dielectric in zinc tin oxide-based thin film transistorcitations
- 2019Uniform Sb<sub>2</sub>S<sub>3</sub>optical coatings by chemical spray methodcitations
- 2019Influence of Post-UV/Ozone Treatment of Ultrasonic-Sprayed Zirconium Oxide Dielectric Films for a Low-Temperature Oxide Thin Film Transistorcitations
- 2019Photocatalytic Degradation of Different VOCs in the Gas-Phase over TiO2 Thin Films Prepared by Ultrasonic Spray Pyrolysiscitations
- 2019Effect of the Titanium Isopropoxide:Acetylacetone Molar Ratio on the Photocatalytic Activity of TiO2 Thin Filmscitations
- 2019Semitransparent Sb2S3 thin film solar cells by ultrasonic spray pyrolysis for use in solar windowscitations
- 2016Tin sulfide films by spray pyrolysis technique using L‐cysteine as a novel sulfur sourcecitations
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article
Influence of Post-UV/Ozone Treatment of Ultrasonic-Sprayed Zirconium Oxide Dielectric Films for a Low-Temperature Oxide Thin Film Transistor
Abstract
<jats:p>Solution-processed metal oxides require a great deal of thermal budget in order to achieve the desired film properties. Here, we show that the deposition temperature of sprayed zirconium oxide (ZrOx) thin film can be lowered by exposing the film surface to an ultraviolet (UV) ozone treatment at room temperature. Atomic force microscopy reveals a smooth and uniform film with the root mean square roughness reduced from ~ 0.63 nm (UVO-O) to ~ 0.28 nm (UVO-120) in the UV–ozone treated ZrOx films. X-ray photoelectron spectroscopy analysis indicates the formation of a Zr–O network on the surface film, and oxygen vacancy is reduced in the ZrOx lattice by increasing the UV–ozone treatment time. The leakage current density in Al/ZrOx/p-Si structure was reduced by three orders of magnitude by increasing the UV-ozone exposure time, while the capacitance was in the range 290–266 nF/cm2, corresponding to a relative permittivity (k) in the range 5.8–6.6 at 1 kHz. An indium gallium zinc oxide (IGZO)-based thin film transistor, employing a UV-treated ZrOx gate dielectric deposited at 200 °C, exhibits negligible hysteresis, an Ion/Ioff ratio of 104, a saturation mobility of 8.4 cm2 V−1S−1, a subthreshold slope of 0.21 V.dec−1, and a Von of 0.02 V. These results demonstrate the potentiality of low-temperature sprayed amorphous ZrOx to be applied as a dielectric in flexible and low-power-consumption oxide electronics.</jats:p>