| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Mere, Arvo
Tallinn University of Technology
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2023Combinative solution processing and Li doping approach to develop p-type NiO thin films with enchanced electrical propertiescitations
- 2022Effect of laser heat treatment on AlxTi1-xN-based PVD coatings, deposited on carbon and tool steel substratescitations
- 2020Application of ultrasonic sprayed zirconium oxide dielectric in zinc tin oxide-based thin film transistorcitations
- 2020Thickness Effect on Photocatalytic Activity of TiO2 Thin Films Fabricated by Ultrasonic Spray Pyrolysiscitations
- 2019Effect of Carbon Stabilizing Elements on WC Cemented Carbides with Chromium Steel Binder
- 2019Uniform Sb<sub>2</sub>S<sub>3</sub>optical coatings by chemical spray methodcitations
- 2019Influence of Post-UV/Ozone Treatment of Ultrasonic-Sprayed Zirconium Oxide Dielectric Films for a Low-Temperature Oxide Thin Film Transistorcitations
- 2016Tin sulfide films by spray pyrolysis technique using L‐cysteine as a novel sulfur sourcecitations
- 2013Effect of Solution Spray Rate on the Properties of Chemically Sprayed ZnO:In Thin Filmscitations
- 2011Photoluminescence of spray pyrolysis deposited ZnO nanorods
Places of action
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article
Influence of Post-UV/Ozone Treatment of Ultrasonic-Sprayed Zirconium Oxide Dielectric Films for a Low-Temperature Oxide Thin Film Transistor
Abstract
<jats:p>Solution-processed metal oxides require a great deal of thermal budget in order to achieve the desired film properties. Here, we show that the deposition temperature of sprayed zirconium oxide (ZrOx) thin film can be lowered by exposing the film surface to an ultraviolet (UV) ozone treatment at room temperature. Atomic force microscopy reveals a smooth and uniform film with the root mean square roughness reduced from ~ 0.63 nm (UVO-O) to ~ 0.28 nm (UVO-120) in the UV–ozone treated ZrOx films. X-ray photoelectron spectroscopy analysis indicates the formation of a Zr–O network on the surface film, and oxygen vacancy is reduced in the ZrOx lattice by increasing the UV–ozone treatment time. The leakage current density in Al/ZrOx/p-Si structure was reduced by three orders of magnitude by increasing the UV-ozone exposure time, while the capacitance was in the range 290–266 nF/cm2, corresponding to a relative permittivity (k) in the range 5.8–6.6 at 1 kHz. An indium gallium zinc oxide (IGZO)-based thin film transistor, employing a UV-treated ZrOx gate dielectric deposited at 200 °C, exhibits negligible hysteresis, an Ion/Ioff ratio of 104, a saturation mobility of 8.4 cm2 V−1S−1, a subthreshold slope of 0.21 V.dec−1, and a Von of 0.02 V. These results demonstrate the potentiality of low-temperature sprayed amorphous ZrOx to be applied as a dielectric in flexible and low-power-consumption oxide electronics.</jats:p>