| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Pere, Roca I. Cabarrocas
Institut Photovoltaïque d’Île-de-France
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (22/22 displayed)
- 2024Direct growth of highly oriented GaN thin films on silicon by remote plasma CVDcitations
- 2024Nitrogen atoms absolute density measurement using two-photon absorption laser induced fluorescence in reactive magnetron discharge for gallium nitride depositioncitations
- 2024Three Terminal Organic-Silicon Tandem Models
- 2024Insights into the growth of GaN thin films through liquid gallium sputtering: A plasma-film combined analysiscitations
- 2023Reactive plasma sputtering deposition of polycrystalline GaN thin films on silicon substrates at room temperaturecitations
- 2023Evolution of Cu-In Catalyst Nanoparticles under Hydrogen Plasma Treatment and Silicon Nanowire Growth Conditionscitations
- 2023Maskless patterned plasma fabrication of interdigitated back contact silicon heterojunction solar cells: characterization and optimizationcitations
- 2022Wafer-scale pulsed laser deposition of ITO for solar cells: reduced damage vs. interfacial resistancecitations
- 2020Hydrogen Plasma-Assisted Growth of Gold Nanowirescitations
- 2019Heteroepitaxial growth of silicon on GaAs via low-temperature plasma-enhanced chemical vapor depositioncitations
- 2019Annealing of Boron-Doped Hydrogenated Crystalline Silicon Grown at Low Temperature by PECVDcitations
- 2019Annealing of Boron-Doped Hydrogenated Crystalline Silicon Grown at Low Temperature by PECVDcitations
- 2016Low temperature plasma enhanced CVD epitaxial growth of silicon on GaAs: a new paradigm for III-V/Si integrationcitations
- 2016Ultrathin Epitaxial Silicon Solar Cells with Inverted Nanopyramid Arrays for Efficient Light Trappingcitations
- 2014In-situ spectroscopic ellipsometry of microcrystalline silicon deposited by plasma-enhanced chemical vapor deposition on flexible Fe-Ni alloy substrate for photovoltaic applicationscitations
- 2013Multi-resonant absorption in ultra-thin silicon solar cells with metallic nanowirescitations
- 2012Amorphous silicon diamond based heterojunctions with high rectification ratiocitations
- 2012Nanopatterned front contact for broadband absorption in ultra-thin amorphous silicon solar cellscitations
- 2012Stress characterization of thin microcrystalline silicon films
- 2012Low temperature plasma deposition of silicon thin films: From amorphous to crystallinecitations
- 2007Hybrid solar cells based on thin-film silicon and P3HTcitations
- 2002Atomic structure of the nanocrystalline Si particles appearing in nanostructured Si thin films produced in low-temperature radiofrequency plasmascitations
Places of action
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article
Annealing of Boron-Doped Hydrogenated Crystalline Silicon Grown at Low Temperature by PECVD
Abstract
<jats:p>We investigate low-temperature (<200 °C) plasma-enhanced chemical vapor deposition (PECVD) for the formation of p–n junctions. Compared to the standard diffusion or implantation processes, silicon growth at low temperature by PECVD ensures a lower thermal budget and a better control of the doping profile. We previously demonstrated the successful growth of boron-doped epitaxial silicon layers (p+ epi-Si) at 180 °C. In this paper, we study the activation of boron during annealing via dark conductivity measurements of p+ epi-Si layers grown on silicon-on-insulator (SOI) substrates. Secondary Ion Mass Spectroscopy (SIMS) profiles of the samples, carried out to analyze the elemental composition of the p+ epi-Si layers, showed a high concentration of impurities. Finally, we have characterized the p+ epi-Si layers by low-temperature photoluminescence (PL). Results revealed the presence of a broad defect band around 0.9 eV. In addition, we observed an evolution of the PL spectrum of the sample annealed at 200 °C, suggesting that additional defects might appear upon annealing.</jats:p>