| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Binetti, Simona
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2024Investigating strategies for high-efficiency flexible kesterite solar cells from solution-based synthesis
- 2024Exploring strategies for high-efficiency flexible kesterite solar cells from solution process
- 2024Bismuth-Based Perovskite Derivates with Thermal Voltage Exceeding 40 mV/K
- 2023Effect of the ZnSnO/AZO Interface on the Charge Extraction in Cd-Free Kesterite Solar Cellscitations
- 2023Chalcogenide-based hole transport material for stable perovskite solar cells
- 2022Kesterite thin-films deposited by sol-gel techniques with tunable bandgap as absorbers for photovoltaic applications
- 2021Quasi-Zero Dimensional Halide Perovskite Derivates: Synthesis, Status, and Opportunitycitations
- 2019Annealing of Boron-Doped Hydrogenated Crystalline Silicon Grown at Low Temperature by PECVDcitations
- 2019Annealing of Boron-Doped Hydrogenated Crystalline Silicon Grown at Low Temperature by PECVDcitations
- 2018In situ gel formation of high quality kesterite thin films
Places of action
| Organizations | Location | People |
|---|
article
Annealing of Boron-Doped Hydrogenated Crystalline Silicon Grown at Low Temperature by PECVD
Abstract
<jats:p>We investigate low-temperature (<200 °C) plasma-enhanced chemical vapor deposition (PECVD) for the formation of p–n junctions. Compared to the standard diffusion or implantation processes, silicon growth at low temperature by PECVD ensures a lower thermal budget and a better control of the doping profile. We previously demonstrated the successful growth of boron-doped epitaxial silicon layers (p+ epi-Si) at 180 °C. In this paper, we study the activation of boron during annealing via dark conductivity measurements of p+ epi-Si layers grown on silicon-on-insulator (SOI) substrates. Secondary Ion Mass Spectroscopy (SIMS) profiles of the samples, carried out to analyze the elemental composition of the p+ epi-Si layers, showed a high concentration of impurities. Finally, we have characterized the p+ epi-Si layers by low-temperature photoluminescence (PL). Results revealed the presence of a broad defect band around 0.9 eV. In addition, we observed an evolution of the PL spectrum of the sample annealed at 200 °C, suggesting that additional defects might appear upon annealing.</jats:p>