| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Grundmann, Marius
KU Leuven
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (32/32 displayed)
- 2024Ni‐Alloyed Copper Iodide Thin Films: Microstructural Features and Functional Performancecitations
- 2023Realization of Conductive n‐Type Doped <i>α</i>‐Ga<sub>2</sub>O<sub>3</sub> on <i>m</i>‐Plane Sapphire Grown by a Two‐Step Pulsed Laser Deposition Processcitations
- 2023Ultrawide bandgap willemite-type Zn<sub>2</sub>GeO<sub>4</sub> epitaxial thin filmscitations
- 2023Optical properties of Ag<sub><i>x</i></sub>Cu<sub>1–<i>x</i></sub>I alloy thin filmscitations
- 2023Oxygen‐Induced Phase Separation in Sputtered Cu–Sn–I–O Thin Filmscitations
- 2023Defect level in κ-Ga2O3 revealed by thermal admittance spectroscopy ; ENEngelskEnglishDefect level in κ-Ga2O3 revealed by thermal admittance spectroscopycitations
- 2022Band Alignment of Al<sub>2</sub>O<sub>3</sub> on α-(Al<sub>x</sub>Ga<sub>1-x</sub>)<sub>2</sub>O<sub>3</sub>citations
- 2022Fermi level controlled point defect balance in ion irradiated indium oxidecitations
- 2022Competing exciton localization effects due to disorder and shallow defects in semiconductor alloys
- 2021Progression of group-III sesquioxides: epitaxy, solubility and desorption
- 2021Epitaxial Zn3N2 thin films by molecular beam epitaxy: Structural, electrical, and optical propertiescitations
- 2020Toward three-dimensional hybrid inorganic/organic optoelectronics based on GaN/oCVD-PEDOT structurescitations
- 2020Control of phase formation of (AlxGa1 - X)2O3thin films on c-plane Al2O3
- 2020Controlled formation of Schottky diodes on n-doped ZnO layers by deposition of p-conductive polymer layers with oxidative chemical vapor deposition
- 2020Impact of defects on magnetic properties of spinel zinc ferrite thin filmscitations
- 2019Native Point Defect Measurement and Manipulation in ZnO Nanostructurescitations
- 2019Native Point Defect Measurement and Manipulation in ZnO Nanostructures
- 2017Structure and cation distribution of (Mn0.5Zn0.5)Fe2O4 thin films on SrTiO3(001)
- 2016Temperature dependent self-compensation in Al- and Ga-doped Mg0.05 Zn0.95O thin films grown by pulsed laser deposition
- 2016Ellipsometric investigation of ZnFe2O4 thin films in relation to magnetic properties
- 2016Room-temperature domain-epitaxy of copper iodide thin films for transparent CuI/ZnO heterojunctions with high rectification ratios larger than 109citations
- 2015Report / Institute für Physik
- 2015Dielectric function in the spectral range (0.5–8.5)eV of an (Alx Ga1−x )2O3 thin film with continuous composition spread
- 2015Lattice parameters and Raman-active phonon modes of β-(AlxGa1−x)2O3
- 2015Low frequency noise of ZnO based metal-semiconductor field-effect transistors
- 2015Correlation of magnetoelectric coupling in multiferroic BaTiO3-BiFeO3 superlattices with oxygen vacancies and antiphase octahedral rotations
- 2014Schottky contacts to In2O3citations
- 2014Impact of strain on electronic defects in (Mg,Zn)O thin films
- 2014Dielectric function in the NIR-VUV spectral range of (InxGa1-x)2O3 thin films
- 2014Report / Institut für Experimentelle Physik II
- 2014Lattice parameters and Raman-active phonon modes of (InxGa1–x)2O3 for x < 0.4
- 2012Visible emission from ZnCdO/ZnO multiple quantum wellscitations
Places of action
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article
Native Point Defect Measurement and Manipulation in ZnO Nanostructures
Abstract
<jats:p>This review presents recent research advances in measuring native point defects in ZnO nanostructures, establishing how these defects affect nanoscale electronic properties, and developing new techniques to manipulate these defects to control nano- and micro- wire electronic properties. From spatially-resolved cathodoluminescence spectroscopy, we now know that electrically-active native point defects are present inside, as well as at the surfaces of, ZnO and other semiconductor nanostructures. These defects within nanowires and at their metal interfaces can dominate electrical contact properties, yet they are sensitive to manipulation by chemical interactions, energy beams, as well as applied electrical fields. Non-uniform defect distributions are common among semiconductors, and their effects are magnified in semiconductor nanostructures so that their electronic effects are significant. The ability to measure native point defects directly on a nanoscale and manipulate their spatial distributions by multiple techniques presents exciting possibilities for future ZnO nanoscale electronics.</jats:p>