| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Halet, Jean-François
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (29/29 displayed)
- 2023Boron-induced phase transformation of ternary cerium boron silicides
- 2023Investigation of Mn Single and Co-Doping in Thermoelectric CoSb 3 -Skutterudite: A Way Toward a Beneficial Composite Effectcitations
- 2023Enhanced High-Temperature Thermoelectric Performance of Yb 4 Sb 3 via Ce/Bi Co-doping and Metallic Contact Deposition for Device Integrationcitations
- 2023Enhanced NH3 Sensing Performance of Mo Cluster-MoS2 Nanocomposite Thin Films via the Sulfurization of Mo6 Cluster Iodides Precursorcitations
- 2022Improvement of Thermoelectric Properties via Texturation Using a Magnetic Slip Casting Process-The Illustrative Case of CrSi2citations
- 2021Flux synthesis, crystal structure and electronic properties of the layered rare earth metal boride silicide Er<sub>3</sub>Si<sub>5–<i>x</i> </sub>B. An example of a boron/silicon-ordered structure derived from the AlB<sub>2</sub> structure typecitations
- 2021Flux synthesis, crystal structure and electronic properties of the layered rare earth metal boride silicide Er3Si5-xB. An example of a boron/silicon-ordered structure derived from the AlB2 structure typecitations
- 2021Metal-Rich Metallaboranes: Synthesis, Structures and Bonding of Bi- and Trimetallic Open-Faced Cobaltaboranescitations
- 2021Crystal, electronic and magnetic structures of a novel series of intergrowth carbometalates R4Co2C3 (R = Y, Gd, Tb)citations
- 2020Rare-earth Metal Borosilicides R9Si15-xB3 (R = Tb, Yb): New Ordered Structures Derived from the AlB2 Structure Typecitations
- 2020Screening of transition (Y, Zr, Hf, V, Nb, Mo, and Ru) and rare-earth (La and Pr) elements as potential effective dopants for thermoelectric GeTe – an experimental and theoretical appraisalcitations
- 2019Synthesis, Structures and Chemistry of the Metallaboranes of Group 4-9 with M2B5 Core Having a Cross Cluster M-M Bondcitations
- 2019Synthesis, Structures and Chemistry of the Metallaboranes of Group 4–9 with M2B5 Core Having a Cross Cluster M–M Bondcitations
- 2018Impact of Coinage Metal Insertion on the Thermoelectric Properties of GeTe Solid-State Solutionscitations
- 2018Effect of the Processing Route on the Thermoelectric Performance of Nanostructured CuPbSbTecitations
- 2018Detrimental Effects of Doping Al and Ba on the Thermoelectric Performance of GeTecitations
- 2017Sb Doping of Metallic CuCr2S4 as a Route to Highly Improved Thermoelectric Propertiescitations
- 2017Enhancement of the Thermoelectric Properties of FeGa3-type Structures with Group 6 Transition Metals: A Computational Explorationcitations
- 2015Investigations in the ternary praseodymium–boron–carbon system: Solid-state phase diagram and structural chemistrycitations
- 2014Experimental and Theoretical Studies of Quadrupolar Oligothiophene-Cored Chromophores Containing Dimesitylboryl Moieties as π-Accepting End-Groups: Syntheses, Structures, Fluorescence, and One- and Two-Photon Absorptioncitations
- 2012Structural, electronic and magnetic properties of layered REB2C compounds (RE=Dy, Tm, Lu)citations
- 2011New members of ternary rare-earth metal boride carbides containing finite boron-carbon chains: RE25B14C26 (RE=Pr, Nd) and Nd25B12C28citations
- 2008New examples of ternary rare-earth metal boride carbides containing finite boron-carbon chains: The crystal and electronic structure of RE15B6C20 (RE = Pr, Nd)citations
- 2007M2B5 or M2B4? A reinvestigation of the Mo/B and W/B systemcitations
- 2007Chemical bonding in EuTGe (T=Ni, Pd, Pt) and physical properties of EuPdGecitations
- 2006Tin flux synthesis of rare-earth metal silicide compounds RESi1.7 (RE = Dy, Ho): a novel ordered structure derived from the AlB2 typecitations
- 2006The ternary RE-Si-B systems (RE = Dy, Ho, Er and Y) at 1270 K: Solid state phase equilibria and magnetic properties of the solid solution REB2−xSix (RE = Dy and Ho)citations
- 2006Mn5Si3-type host-interstitial boron rare-earth metal silicide compounds RE5Si3: Crystal structures, physical properties and theoretical considerationscitations
- 2006Structural chemistry, magnetism and electrical properties of binary Gd silicides and Ho3Si4citations
Places of action
| Organizations | Location | People |
|---|
article
Detrimental Effects of Doping Al and Ba on the Thermoelectric Performance of GeTe
Abstract
GeTe-based materials are emerging as viable alternatives to toxic PbTe-based thermoelectric materials. In order to evaluate the suitability of Al as dopant in thermoelectric GeTe, a systematic study of thermoelectric properties of GeAlTe ( = 0⁻0.08) alloys processed by Spark Plasma Sintering are presented here. Being isoelectronic to GeInTe and GeGaTe, which were reported with improved thermoelectric performances in the past, the GeAlTe system is particularly focused (studied both experimentally and theoretically). Our results indicate that doping of Al to GeTe causes multiple effects: (i) increase in -type charge carrier concentration; (ii) decrease in carrier mobility; (iii) reduction in thermopower and power factor; and (iv) suppression of thermal conductivity only at room temperature and not much significant change at higher temperature. First principles calculations reveal that Al-doping increases the energy separation between the two valence bands (loss of band convergence) in GeTe. These factors contribute for GeAlTe to exhibit a reduced thermoelectric figure of merit, unlike its In and Ga congeners. Additionally, divalent Ba-doping [GeBaTe ( = 0⁻0.06)] is also studied.