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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Sochacki, Mariusz
Warsaw University of Technology
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (9/9 displayed)
- 2024The Preparation and Properties of a Hydrogen-Sensing Field-Effect Transistor with a Gate of Nanocomposite C-Pd Film
- 2021TiAl-based Ohmic Contacts to p-type 4H-SiC
- 2020Development of Assembly Techniques for Connection of AlGaN/GaN/Si Chips to DBC substratecitations
- 2020Ti and TiAl-based ohmic contacts to 4H-SiCcitations
- 2018Influence of Atomic Layer Deposition Temperature on the Electrical Properties of Al/ZrO2/SiO2/4H‐SiC Metal‐Oxide Semiconductor Structurescitations
- 2016Electrical characterization of ZnO/4H-SiC n–p heterojunction diodecitations
- 2015Depth Profile Analysis of Phosphorus Implanted SiC Structurescitations
- 2011Electronic properties of BaTiO<sub>3</sub>/4H-SiC interfacecitations
- 2011Mechanisms of carriers transport in Ni/n-SiC, Ti/n-SiC ohmic contactscitations
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article
The Preparation and Properties of a Hydrogen-Sensing Field-Effect Transistor with a Gate of Nanocomposite C-Pd Film
Abstract
<jats:p>The objective of this paper is to evaluate the effect of a nanostructured C-Pd film deposited in the gate area of a field-effect transistor (FET) with a carbon–palladium composite gate (C-Pd/FET) on the hydrogen-sensing properties of the transistor. The method of preparing a field-effect transistor (FET) with a C-Pd film deposited as a gate and the properties of such a transistor and the film itself are presented. The C-Pd film deposited by PVD method on the gate area serves as an active layer. The PVD process was carried out in a dynamic vacuum of 10−5 mbar from two separated sources—one containing fullerenes (C60) and the other containing palladium acetate. Scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS, EDX) and electrical property studies were used to the characterize C-Pd films and FET/C-Pd structures. SEM observations revealed the topography of C-Pd films and FET/C-Pd transistors. EDS/EDX microanalysis was applied to visualize the arrangement of elements on the studied surfaces. The changes in electrical properties (resistance and relative resistance) due to the presence of hydrogen were studied in a designed and computerized experimental set-up. The enhanced properties of the FET/C-Pd transistor are demonstrated in terms of hydrogen detection.</jats:p>