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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Carlos, Emanuel
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (15/15 displayed)
- 2024Printed Memristors: An Overview of Ink, Materials, Deposition Techniques, and Applicationscitations
- 2024Inkjet printed IGZO memristors with volatile and non-volatile switchingcitations
- 2022Solution Combustion Synthesis of Hafnium-Doped Indium Oxide Thin Films for Transparent Conductorscitations
- 2022Solution Combustion Synthesis of Hafnium-Doped Indium Oxide Thin Films for Transparent Conductorscitations
- 2022A Comparison between Solution-Based Synthesis Methods of ZrO2 Nanomaterials for Energy Storage Applicationscitations
- 2022A Comparison between Solution-Based Synthesis Methods of ZrO2 Nanomaterials for Energy Storage Applicationscitations
- 2020Application of ultrasonic sprayed zirconium oxide dielectric in zinc tin oxide-based thin film transistorcitations
- 2020Printed, Highly Stable Metal Oxide Thin-Film Transistors with Ultra-Thin High-κ Oxide Dielectriccitations
- 2020Printed, Highly Stable Metal Oxide Thin-Film Transistors with Ultra-Thin High-κ Oxide Dielectriccitations
- 20202D Resistive Switching Based on Amorphous Zinc–Tin Oxide Schottky Diodescitations
- 2019Hybrid (Ag)ZnO/Cs/PMMA nanocomposite thin filmscitations
- 2019Hybrid (Ag)ZnO/Cs/PMMA nanocomposite thin filmscitations
- 2019Tailoring IGZO composition for enhanced fully solution-based thin film transistorscitations
- 2016UV-Mediated Photochemical Treatment for Low-Temperature Oxide-Based Thin-Film Transistorscitations
- 2016FUV-assisted low temperature AlOx solution based dielectric for oxide TFTs
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article
A Comparison between Solution-Based Synthesis Methods of ZrO2 Nanomaterials for Energy Storage Applications
Abstract
<p>The present study is focused on the synthesis of zirconium dioxide (ZrO<sub>2</sub>) nanomaterials using the hydrothermal method assisted by microwave irradiation and solution combustion synthesis. Both synthesis techniques resulted in ZrO<sub>2</sub> powders with a mixture of tetragonal and monoclinic phases. For microwave synthesis, a further calcination treatment at 800 °C for 15 min was carried out to produce nanopowders with a dominant monoclinic ZrO<sub>2</sub> phase, as attested by X-ray diffraction (XRD) and Raman spectroscopy. The thermal behavior of the ZrO<sub>2</sub> nanopowder was investigated by in situ XRD measurements. From the scanning electron microscopy (SEM) and transmission electron microscopy (TEM) images, the presence of near spherical nanoparticles was clear, and TEM confirmed the ZrO<sub>2</sub> phases that comprised the calcinated nanopowders, which include a residual tetragonal phase. The optical properties of these ZrO<sub>2</sub> nanopowders were assessed through photoluminescence (PL) and PL excitation (PLE) at room temperature (RT), revealing the presence of a broad emission band peaked in the visible spectral region, which suffers a redshift in its peak position, as well as intensity enhancement, after the calcination treatment. The powder resultant from the solution combustion synthesis was composed of plate-like structures with a micrometer size; however, ZrO<sub>2</sub> nanoparticles with different shapes were also observed. Thin films were also produced by solution combustion synthesis and deposited on silicon substrates to produce energy storage devices, i.e., ZrO<sub>2</sub> capacitors. The capacitors that were prepared from a 0.2 M zirconium nitrate-based precursor solution in 2-methoxyethanol and annealed at 350 °C exhibited an average dielectric constant (κ) of 11 ± 0.5 and low leakage current density of 3.9 ± 1.1 × 10<sup>−7</sup> A/cm<sup>2</sup> at 1 MV/cm. This study demonstrates the simple and cost-effective aspects of both synthesis routes to produce ZrO<sub>2</sub> nanomaterials that can be applied to energy storage devices, such as capacitors.</p>