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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Span, Gerhard
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Publications (3/3 displayed)
- 2022Influence of Thermoelectric Properties and Parasitic Effects on the Electrical Power of Thermoelectric Micro-Generatorscitations
- 2018Efficient p-n junction-based thermoelectric generator that can operate at extreme temperature conditions
- 2018Efficient p-n junction-based thermoelectric generator that can operate at extreme temperature conditionscitations
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article
Influence of Thermoelectric Properties and Parasitic Effects on the Electrical Power of Thermoelectric Micro-Generators
Abstract
International audience ; Heat recovery systems based on thermoelectric micro-generators (µ-TEGs) can play a significant role in the development of wireless, energetically autonomous electronics. However, to date, the power density recovered for low temperature differences using µ-TEGs is limited to a few micro-watts or less, which is still insufficient to power a wide-range of wireless devices. To develop more efficient µ-TEGs, material, device and system requirements must be considered simultaneously. In this study, an innovative design of an in-plane µ-TEG integrating bismuth telluride forming sinusoidal-shaped trenches is reported. Using 3D numerical modelling, the influence of boundary conditions, parasitic effects (electrical and thermal contact resistances), and transport properties of thermoelectric materials on the output power of these µ-TEGs are investigated in detail for a small temperature difference of 5 K between the hot and cold sources. Compared to wavy-shaped trenches, this novel shape enables enhancing the output power. The results show that either the thermal conductivity or the Seebeck coefficient of the active n- and p-type semiconductors is the key parameter that should be minimized or maximized, depending on the magnitude of the parasitic effects.