| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Martins, Jorge
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2022Formulation and Characterization of a Composite Coating Formulation Based on Acrylic Foam and Cork Granules
- 2022Foldable and Recyclable Iontronic Cellulose Nanopaper for Low-Power Paper Electronicscitations
- 2022Foldable and Recyclable Iontronic Cellulose Nanopaper for Low-Power Paper Electronicscitations
- 2021Handwritten and Sustainable Electronic Logic Circuits with Fully Printed Paper Transistorscitations
- 2021Towards Sustainable Crossbar Artificial Synapses with Zinc-Tin Oxidecitations
- 2021Towards Sustainable Crossbar Artificial Synapses with Zinc-Tin Oxidecitations
- 20202D Resistive Switching Based on Amorphous Zinc–Tin Oxide Schottky Diodescitations
- 2020Piezoelectricity Enhancement of Nanogenerators Based on PDMS and ZnSnO3 Nanowires through Microstructurationcitations
- 2020Rail-to-Rail Timing Signals Generation Using InGaZnO TFTs for Flexible X-Ray Detectorcitations
- 2016Improving positive and negative bias illumination stress stability in parylene passivated IGZO transistorscitations
Places of action
| Organizations | Location | People |
|---|
article
Towards Sustainable Crossbar Artificial Synapses with Zinc-Tin Oxide
Abstract
In this article, characterization of fully patterned zinc-tin oxide (ZTO)-based memristive devices with feature sizes as small as 25 µm2 is presented. The devices are patterned via lift-off with a platinum bottom contact and a gold-titanium top contact. An on/off ratio of more than two orders of magnitude is obtained without the need for electroforming processes. Set operation is a current controlled process, whereas the reset is voltage dependent. The temperature dependency of the electrical characteristics reveals a bulk-dominated conduction mechanism for high resistance states. However, the charge transport at low resistance state is consistent with Schottky emission. Synaptic properties such as potentiation and depression cycles, with progressive increases and decreases in the conductance value under 50 successive pulses, are shown. This validates the potential use of ZTO memristive devices for a sustainable and energy-efficient brain-inspired deep neural network computation.