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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Jakiela, Rafal
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Topics
Publications (8/8 displayed)
- 2019Structural and Electrical Parameters of ZnO Thin Films Grown by ALD with either Water or Ozone as Oxygen Precursorscitations
- 2018Nematicity of correlated systems driven by anisotropic chemical phase separationcitations
- 2017Interplay between localization and magnetism in (Ga,Mn)As and (In,Mn)As
- 2012GaMnN epitaxial films with high magnetization
- 2012Manipulating Mn-Mg-k cation complexes to control the charge- and spin-state of Mn in GaNcitations
- 2011Structural and paramagnetic properties of dilute Ga1-xMnxN
- 2010Structural and paramagnetic properties of dilute Ga1-xMnxNcitations
- 2007Paramagnetic GaN : Fe and ferromagnetic (Ga,Fe)N: The relationship between structural, electronic, and magnetic propertiescitations
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article
Structural and Electrical Parameters of ZnO Thin Films Grown by ALD with either Water or Ozone as Oxygen Precursors
Abstract
<jats:p>Low temperature (at 100 °C and below) growth of ZnO thin films by atomic layer deposition (ALD) is demonstrated. Properties of the layers grown with two different oxygen reagents: ozone and water are compared. Diethylzinc (DEZ) was used as metal precursor. Electrical and structural properties of films obtained at several different growth temperatures, ranging from 50 °C to 250 °C were analyzed. It turned out that the film grown in the water-based process at 250 °C and all films grown with ozone have more ordered crystallographic structure with the privileged growth direction (001) perpendicular to the substrate than water-based samples grown in temperatures 100–200 °C. Higher free electron concentration at room temperature was observed for ozone-based samples grown at 100 °C and 150 °C in comparison to water-based samples obtained at the same growth temperature. Low value of resistivity in case of ozone-based samples grown at 100 °C is a promising result, however lower electron mobility requires further optimization.</jats:p>