• Johnson, Andrew L.
• Brookes, Andy
• Marken, Frank
• Bentley, Cl
• Zhang, Jie
• Harris-Lee, Tr

Abstract

<p>Hematite (α-Fe₂O₃) is one of the most promising and widely used semiconductors for application in photoelectrochemical (PEC) water splitting, owing to its moderate bandgap in the visible spectrum and earth abundance. However, α-Fe₂O₃ is limited by short hole-diffusion lengths. Ultrathin α-Fe₂O₃ films are often used to limit the distance required for hole transport, therefore mitigating the impact of this property. The development of highly controllable and scalable ultrathin film deposition techniques is therefore crucial to the application of α-Fe₂O₃. Here, a plasma-enhanced atomic layer deposition (PEALD) process for the deposition of homogenous, conformal, and thickness-controlled α-Fe₂O₃ thin films (&lt;100 nm) is developed. A readily available iron precursor, dimethyl(aminomethyl)ferrocene, was used in tandem with an O₂ plasma co-reactant at relatively low reactor temperatures, ranging from 200 to 300 °C. Optimisation of deposition protocols was performed using the thin film growth per cycle and the duration of each cycle as optimisation metrics. Linear growth rates (constant growth per cycle) were measured for the optimised protocol, even at high cycle counts (up to 1200), confirming that all deposition is ‘true’ atomic layer deposition (ALD). Photoelectrochemical water splitting performance was measured under solar simulated irradiation for pristine α-Fe₂O₃ deposited onto FTO, and with a α-Fe₂O₃-coated TiO₂ nanorod photoanode.</p>

Topics

• impedance spectroscopy
• thin film
• semiconductor
• iron
• atomic layer deposition