| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Chroneos, Alexander
University of Thessaly
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (13/13 displayed)
- 2024Using the Bond Valence Sum Model to calculate Li-diffusion pathways in Silicene with MgX2 (X=Cl, Br, I) substrates
- 2023Efficient and Stable Air-Processed Ternary Organic Solar Cells Incorporating Gallium-Porphyrin as an Electron Cascade Material.
- 2023A density functional theory study of the CiN and the CiNOi complexes in siliconcitations
- 2022DFT insights into the electronic structure, mechanical behaviour, lattice dynamics and defect processes in the first Sc-based MAX phase Sc2SnCcitations
- 2022Carbon Nanodots as Electron Transport Materials in Organic Light Emitting Diodes and Solar Cells.
- 2022Core–shell carbon-polymer quantum dot passivation for near infrared perovskite light emitting diodescitations
- 2021Defect processes in halogen doped SnO2citations
- 2020The interstitial carbon–dioxygen center in irradiated siliconcitations
- 2019Impact of local composition on the energetics of E-centres in Si1−xGex alloyscitations
- 2019Engineering Transport in Manganites by Tuning Local Nonstoichiometry in Grain Boundariescitations
- 2018Smartphones as an integrated platform for monitoring driver behaviour: The role of sensor fusion and connectivitycitations
- 2017M3AlC2 MAX phases for nuclear applications
- 2017Defect processes of Ti3AC2 MAX phases: Insights from atomistic modelling
Places of action
| Organizations | Location | People |
|---|
article
The interstitial carbon–dioxygen center in irradiated silicon
Abstract
<p>We investigated, experimentally as well as theoretically, defect structures in electron irradiated Czochralski-grown silicon (Cz-Si) containing carbon. Infrared spectroscopy (IR) studies observed a band at 1020 cm<sup>−1</sup> arisen in the spectra around 300<sup>◦</sup>C. Its growth occurs concomitantly with the decay out of the well-known vacancy-oxygen (VO) defect, with a Local Vibrational Mode (LVM) at 830 cm<sup>−1</sup> and carbon interstitial-oxygen interstitial (C<sub>i</sub>O<sub>i</sub>) defect with a LVM at 862 cm<sup>−1</sup>, in silicon (Si). The main purpose of this work is to establish the origin of the 1020 cm<sup>−1</sup> band. One potential candidate is the carbon interstitial-dioxygen (C<sub>i</sub>O<sub>2i</sub>) defect since it is expected to form upon annealing out of the C<sub>i</sub>O<sub>i</sub> pair. To this end, systematic density functional theory (DFT) calculations were used to predict the lowest energy structure of the (C<sub>i</sub>O<sub>2i</sub>) defect in Si. Thereafter, we employed the dipole–dipole interaction method to calculate the vibrational frequencies of the structure. We found that C<sub>i</sub>O<sub>2i</sub> defect has an LVM at ~1006 cm<sup>−1</sup>, a value very close to our experimental one. The analysis and study of the results lead us to tentatively correlate the 1020 cm<sup>−1</sup> band with the C<sub>i</sub>O<sub>2i</sub> defect.</p>