• Wachnicki, Łukasz
• Gieraltowska, Sylwia
• Godlewski, Marek
• Vallati, Andrea
• Jurzecka-Szymacha, Maria
• Jaglarz, Janusz
• Dulian, Piotr
• Seweryn, Aleksandra
• Nosidlak, Natalia

Abstract

<jats:p>In this work, the results of ellipsometric studies of thin films of broadband oxides (ZnO, TiO2, ZrO2) and broadband oxides doped with Al2O3 (Al2O3–ZnO, Al2O3–TiO2, Al2O3–ZrO2) are presented. All layers have been produced using the atomic layer deposition method. Ellipsometric studies were performed in the wavelength range of 193–1690 nm. Sellmeier and Cauchy models were used to describe the optical properties of the tested layers. Dispersion dependencies of refractive indices were determined for thin layers of broadband oxides on silicon substrates, and then for layers of Al2O3 admixture. The EDX investigations enabled estimation of the composition of the alloys. The Bruggeman effective medium approximation (EMA) model was used to determine the theoretical dependencies of the dispersion refractive indices of the studied alloys. The refractive index values determined using the Bruggeman EMA model are in good agreement with the values determined from the ellipsometric measurements. The doping of thin layers of ZnO, ZrO2 and TiO2 with Al2O3 enables the creation of anti-reflective layers and filters with a specific refractive index.</jats:p>

Topics

• dispersion
• thin film
• Silicon
• Energy-dispersive X-ray spectroscopy
• atomic layer deposition