• Stankus, Vytautas
• Iljinas, Aleksandras
• Ivanov, Maksim
• Čyvienė, Jurgita
• Andrulevicius, Mindaugas
• Banys, Jūras
• Beklešovas, Benas

Abstract

<jats:p>Lead zirconate titanate (PZT) is a widely used material with applications ranging from piezoelectric sensors to developing non-volatile memory devices. Pb(ZrxTi1−x)O3 films were deposited by DC reactive magnetron sputtering at a temperature range of (500–600) °C. X-ray diffraction (XRD) indicated the perovskite phase formation in samples synthesized at 550 °C, which agrees with Raman data analysis. Scanning electron microscopy (SEM) measurements supplemented XRD data and showed the formation of dense PZT microstructures. Further X-ray photoelectron spectroscopy (XPS) analysis confirmed that the Zr/Ti ratio corresponds to the Pb(Zr0.58Ti0.42)O3 content. Dielectric measurement of the same sample indicated dielectric permittivity to be around 150 at room temperature, possibly due to the defects in the structure. P-E measurements show ferroelectric behavior at a temperature range of (50–180) °C. It was found that the remnant polarization increased with temperature, and at the same time, coercive field values decreased. Such behavior can be attributed to energetically deep defects.</jats:p>

Topics

• perovskite
• impedance spectroscopy
• microstructure
• phase
• scanning electron microscopy
• x-ray diffraction
• x-ray photoelectron spectroscopy
• reactive
• defect