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| Naji, M. |
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| Azevedo, Nuno Monteiro |
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Schieffer, Philippe
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Topics
Publications (9/9 displayed)
- 2024Multiscale approach for modeling magnetization properties of inhomogeneous ultrathin magnetic layers
- 2021III-V/Si antiphase boundaries used as 2D-semimetallic topological vertical inclusions for solar hydrogen production
- 2020Origin of weak Fermi level pinning at the graphene/silicon interfacecitations
- 2019Reduction of Schottky Barrier Height at Graphene/Germanium Interface with Surface Passivationcitations
- 2019Reduction of Schottky Barrier Height at Graphene/Germanium Interface with Surface Passivationcitations
- 2016Band alignments in Fe/graphene/Si(001) junctions studied by x-ray photoemission spectroscopycitations
- 2014Induced work function changes at Mg-doped MgO/Ag(001) interfaces: Combined Auger electron diffraction and density functional studycitations
- 2010Work function shifts, Schottky barrier height, and ionization potential determination of thin MgO films on Ag(001)citations
- 2004Fe3GaAs/GaAs(0 01): a stable and magnetic metal-semiconductor heterostructurecitations
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article
Reduction of Schottky Barrier Height at Graphene/Germanium Interface with Surface Passivation
Abstract
<jats:p>Fermi level pinning at metal/semiconductor interfaces forbids a total control over the Schottky barrier height. 2D materials may be an interesting route to circumvent this problem. As they weakly interact with their substrate through Van der Waals forces, deposition of 2D materials avoids the formation of the large density of state at the semiconductor interface often responsible for Fermi level pinning. Here, we demonstrate the possibility to alleviate Fermi-level pinning and reduce the Schottky barrier height by the association of surface passivation of germanium with the deposition of 2D graphene.</jats:p>