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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Eng, Lukas
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (26/26 displayed)
- 2024Probing Ferroelectric Phase Transitions in Barium Titanate Single Crystals via in-situ Second Harmonic Generation Microscopy
- 2023Impact of Ferroelectric Layer Thickness on Reliability of Back-End-of-Line-Compatible Hafnium Zirconium Oxide Filmscitations
- 2023A Study on Imprint Behavior of Ferroelectric Hafnium Oxide Caused by High-Temperature Annealingcitations
- 2023Polarization Sensitivity in Scattering-Type Scanning Near-Field Optical Microscopy—Towards Nanoellipsometrycitations
- 2022Atomic layer deposition of yttrium iron garnet thin filmscitations
- 2022Effect of Al2O3 interlayers on the microstructure and electrical response of ferroelectric doped HfO2 thin filmscitations
- 2021Aging in Ferroelectric Si-Doped Hafnium Oxide Thin Filmscitations
- 2021Electric field-induced crystallization of ferroelectric hafnium zirconium oxidecitations
- 2021Tricyanidoferrates(−IV) and Ruthenates(−IV) with Non-Innocent Cyanido Ligandscitations
- 2021Influence of Annealing Temperature on the Structural and Electrical Properties of Si-Doped Ferroelectric Hafnium Oxidecitations
- 2021Impact of the SiO2interface layer on the crystallographic texture of ferroelectric hafnium oxidecitations
- 2020Structural and electrical comparison of si and zr doped hafnium oxide thin films and integrated fefets utilizing transmission kikuchi diffractioncitations
- 2016Multidomain Skyrmion Lattice State in Cu2OSeO3citations
- 2015Conductivity and magnetoresistance of La0.7Ce0.3MnO3-δ thin films under photoexcitationcitations
- 2015Optical antennae for near-field induced nonlinear photochemical reactions of photolabile azo-and amine groups
- 2014The Mn2+/Mn3+ state of La0.7Ce 0.3MnO3 by oxygen reduction and photodopingcitations
- 2014Near-field resonance shifts of ferroelectric barium titanate domains upon low-temperature phase transitioncitations
- 2013Strain-mediated elastic coupling in magnetoelectric nickel/barium-titanate heterostructurescitations
- 2010Web-like domain structure formation in barium titanate single crystalscitations
- 2010Poly(2-(dimethylamino)ethyl methacrylate) brushes with incorporated nanoparticles as a SERS active sensing layercitations
- 2010Fabrication of two-dimensional Au@FePt core-shell nanoparticle arrays by photochemical metal depositioncitations
- 2009Probing polarization and dielectric function of molecules with higher order harmonics in scattering-near-field scanning optical microscopycitations
- 2009Ferroelectric Lithographycitations
- 2005Surface photovoltage spectroscopy for the investigation of perovskite oxide interfacescitations
- 2002Metal salt complexation of spin-coated ultrathin diazosulfonate terpolymer filmscitations
- 2002Novel diazosulfonate terpolymers for the preparation of structured functionalized surfaces
Places of action
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article
Polarization Sensitivity in Scattering-Type Scanning Near-Field Optical Microscopy—Towards Nanoellipsometry
Abstract
Electric field enhancement mediated through sharp tips in scattering-type scanning near-field optical microscopy (s-SNOM) enables optical material analysis down to the 10-nm length scale and even below. Nevertheless, the out-of-plane electric field component is primarily considered here due to the lightning rod effect of the elongated s-SNOM tip being orders of magnitude stronger than any in-plane field component. Nonetheless, the fundamental understanding of resonantly excited near-field coupled systems clearly allows us to take profit from all vectorial components, especially from the in-plane ones. In this paper, we theoretically and experimentally explore how the linear polarization control of both near-field illumination and detection can constructively be implemented to (non-)resonantly couple to selected sample permittivity tensor components, e.g., explicitly to the in-plane directions as well. When applying the point-dipole model, we show that resonantly excited samples respond with a strong near-field signal to all linear polarization angles. We then experimentally investigate the polarization-dependent responses for both non-resonant (Au) and phonon-resonant (3C-SiC) sample excitations at a 10.6 µm and 10.7 µm incident wavelength using a tabletop CO2 laser. Varying the illumination polarization angle thus allows one to quantitatively compare the scattered near-field signatures for the two wavelengths. Finally, we compare our experimental data to simulation results and thus gain a fundamental understanding of the polarization’s influence on the near-field interaction. As a result, the near-field components parallel and perpendicular to the sample surface can be easily disentangled and quantified through their polarization signatures, connecting them directly to the sample’s local permittivity.