• Procel, Paul
• Heerden, Rik Van
• Mazzarella, Luana
• Isabella, Olindo
• Santbergen, Rudi

Abstract

Organic-inorganic metal halide perovskites have attracted a considerable interest in the photovoltaic scientific community demonstrating a rapid and unprecedented increase in conversion efficiency in the last decade. Besides the stunning progress in performance, the understanding of the physical mechanisms and limitations that govern perovskite solar cells are far to be completely unravelled. In this work, we study the origin of their hysteretic behaviour from the standpoint of fundamental semiconductor physics by means of technology computer aided design electrical simulations. Our findings identify that the density of shallow interface defects at the interfaces between perovskite and transport layers plays a key role in hysteresis phenomena. Then, by comparing the defect distributions in both spatial and energetic domains for different bias conditions and using fundamental semiconductor equations, we can identify the driving force of hysteresis in terms of slow recombination processes and charge distributions.

Topics

• density
• perovskite
• simulation
• semiconductor
• defect