| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Lederer, Maximilian
Fraunhofer Institute for Photonic Microsystems
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (9/9 displayed)
- 2024Influences and diffusion effects of lithium contamination during the thermal oxidation process of siliconcitations
- 2023300 mm CMOS-compatible superconducting HfN and ZrN thin films for quantum applicationscitations
- 2023A Study on Imprint Behavior of Ferroelectric Hafnium Oxide Caused by High-Temperature Annealingcitations
- 2023300 mm CMOS-compatible superconducting HfN and ZrN thin films for quantum applicationscitations
- 2022Effect of Al2O3 interlayers on the microstructure and electrical response of ferroelectric doped HfO2 thin filmscitations
- 2021Electric field-induced crystallization of ferroelectric hafnium zirconium oxidecitations
- 2021RF-Characterization of HZO Thin Film Varactorscitations
- 2021Influence of Annealing Temperature on the Structural and Electrical Properties of Si-Doped Ferroelectric Hafnium Oxidecitations
- 2020Structural and electrical comparison of si and zr doped hafnium oxide thin films and integrated fefets utilizing transmission kikuchi diffractioncitations
Places of action
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article
Effect of Al2O3 interlayers on the microstructure and electrical response of ferroelectric doped HfO2 thin films
Abstract
<p>Novel devices based on ferroelectric hafnium oxide comply with the increasing demand for highly scalable embedded non-volatile memory devices, especially for in-memory computing applications. However, due to the polycrystalline nature of these hafnium oxide films, highly scaled devices face variability concerns. In order to enable smaller grains to circumvent the current limitations, the introduction of Al<sub>2</sub>O<sub>3</sub> interlayers to interrupt the columnar grain growth is presented herein. Transmission Kikuchi diffraction is utilized to investigate influences of the Al<sub>2</sub>O<sub>3</sub> layer on the microstructure of hafnium oxide. Moreover, electrical analysis indicates how the interlayer affects the wake-up phenomena as well as the electric field distribution within the stack. These results provide evidence on how to control grain size, electric behavior, and crystallization temperature by the insertion of Al<sub>2</sub>O<sub>3</sub> interlayers.</p>