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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Mere, Arvo
Tallinn University of Technology
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2023Combinative solution processing and Li doping approach to develop p-type NiO thin films with enchanced electrical propertiescitations
- 2022Effect of laser heat treatment on AlxTi1-xN-based PVD coatings, deposited on carbon and tool steel substratescitations
- 2020Application of ultrasonic sprayed zirconium oxide dielectric in zinc tin oxide-based thin film transistorcitations
- 2020Thickness Effect on Photocatalytic Activity of TiO2 Thin Films Fabricated by Ultrasonic Spray Pyrolysiscitations
- 2019Effect of Carbon Stabilizing Elements on WC Cemented Carbides with Chromium Steel Binder
- 2019Uniform Sb<sub>2</sub>S<sub>3</sub>optical coatings by chemical spray methodcitations
- 2019Influence of Post-UV/Ozone Treatment of Ultrasonic-Sprayed Zirconium Oxide Dielectric Films for a Low-Temperature Oxide Thin Film Transistorcitations
- 2016Tin sulfide films by spray pyrolysis technique using L‐cysteine as a novel sulfur sourcecitations
- 2013Effect of Solution Spray Rate on the Properties of Chemically Sprayed ZnO:In Thin Filmscitations
- 2011Photoluminescence of spray pyrolysis deposited ZnO nanorods
Places of action
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article
Combinative solution processing and Li doping approach to develop p-type NiO thin films with enchanced electrical properties
Abstract
<jats:p>The deposition of nickel oxide (NiO<jats:sub>x</jats:sub>) thin film from an acetylacetonate source using many solution-based techniques has been avoided owing to its poor solubility in alcohol solvents. From this perspective, this work provides a systematic investigation of the development of NiO<jats:sub>x</jats:sub> thin film, using a combinative approach of ultrasonic spray pyrolysis (USP) and Li dopant for the synthesis and optimization of structural and optoelectronic properties of the films. An in-depth comparative analysis of nickel acetylacetonate-based precursor, employing acetonitrile and methanol as solvents, is provided. It is demonstrated that USP from acetylacetonate precursor yielded uniform, well-compact, and transparent films, with polycrystalline cubic NiO<jats:sub>x</jats:sub> crystal structures. By screening the deposition temperature in the range of 300–450°C, a temperature of 400°C was identified as an optimal processing temperature leading to uniform, compact, highly transparent, and p-type conductive films. At optimized deposition conditions (400°C), lithium-doped NiO<jats:sub>x</jats:sub> (Li:NiO<jats:sub>x</jats:sub>) thin film was deposited. The shift of the main (200) XRD peak position from 43.48° (0-Li:NiO<jats:sub>x</jats:sub>) to 43.56° (60-Li:NiO<jats:sub>x</jats:sub>) indicated Li incorporation into the NiO<jats:sub>x</jats:sub> lattice. An X-ray photoelectron spectroscopy (XPS) study was employed to unravel the incorporation of Li into the deposited Li:NiO<jats:sub>x</jats:sub> thin films. With the deconvolution of the Ni 2p core level for the as-deposited (0, 60)-Li:NiO<jats:sub>x</jats:sub> films, the intensity of Ni<jats:sup>3+</jats:sup> related peak was found to increase slightly with Li doping. Furthermore, all the deposited Li:NiO<jats:sub>x</jats:sub> thin films showed p-type conductivity behavior, and the resistivity was reduced from 10<jats:sup>4</jats:sup> Ωcm (0-Li:NiO<jats:sub>x</jats:sub>) to 10<jats:sup>2</jats:sup> Ωcm (60-Li:NiO<jats:sub>x</jats:sub>). Based on these results, the deposited NiO<jats:sub>x</jats:sub> and Li:NiO<jats:sub>x</jats:sub> thin films suggested that USP-deposited Li:NiO<jats:sub>x</jats:sub> is highly suitable for application in inverted structure solar cells as the hole transport layer.</jats:p>