| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Qu, Yongtao
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (11/11 displayed)
- 2023A structural, optical and electrical comparison between physical vapour deposition and slot-die deposition of Al:ZnO (AZO)
- 2022Elimination of the carbon-rich layer in Cu2ZnSn(S, Se)4 absorbers prepared from nanoparticle inkscitations
- 2022Routes to Increase Performance for Antimony Selenide Solar Cells using Inorganic Hole Transport Layerscitations
- 2022Ex-situ Ge-doping of CZTS Nanocrystals and CZTSSe Solar Absorber Filmscitations
- 2022Ex situ Ge-doping of CZTS nanocrystals and CZTSSe solar absorber films.citations
- 2022Recovery mechanisms in aged kesterite solar cellscitations
- 2020Innovative fabrication of low-cost kesterite solar cells for distributed energy applications
- 2019Solution processing route to Na incorporation in CZTSSe nanoparticle ink solar cells on foil substratecitations
- 2018Photovoltaic performance of CdS/CdTe junctions on ZnO nanorod arrayscitations
- 2016Selenization kinetics inCu2ZnSn(S,Se)4 solar cells prepared from nanoparticle inkscitations
- 2016The role of nanoparticle inks in determining the performance of solution processed Cu2ZnSn(S,Se)4thin film solar cellscitations
Places of action
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article
Routes to Increase Performance for Antimony Selenide Solar Cells using Inorganic Hole Transport Layers
Abstract
Simple compound antimony selenide (Sb2Se3) is a promising emergent light absorber for photovoltaic applications benefiting from its outstanding photoelectric properties. Antimony selenide thin film solar cells however, are limited by low open circuit voltage due to carrier recombination at the metallic back contact interface. In this work, solar cell capacitance simulator (SCAPS) is used to interpret the effect of hole transport layers (HTL), i.e. transition metal oxides NiO and MoOx thin films on Sb2Se3 device characteristics. This reveals the critical role of NiO and MoOx in altering the energy band alignment and increasing device performance by the introduction of a high energy barrier to electrons at the rear absorber/metal interface. Close-space sublimation (CSS) and thermal evaporation (TE) techniques are applied to deposit Sb2Se3 layers in both substrate and superstrate thin film solar cells with NiO and MoOx HTLs incorporated into the device structure. The effect of the HTLs on Sb2Se3 crystallinity and solar cell performance is comprehensively studied. In superstrate device configuration, CSS-based Sb2Se3 solar cells with NiO HTL showed average improvements in open circuit voltage, short circuit current density and power conversion efficiency of 12, 41 and 42, respectively, over the standard devices.Similarly, using a NiO HTL in TE-based Sb2Se3 devices improved open circuit voltage, short circuit current density and power conversion efficiency by 39, 68 and 92, respectively.