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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Petrov, R. H. | Madrid |
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Bih, L. |
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Casati, R. |
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Kočí, Jan | Prague |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Lim, Jae-Hong
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article
Synthesis of Copper Telluride Thin Films by Electrodeposition and Their Electrical and Thermoelectric Properties
Abstract
<jats:p>Intermetallic copper telluride thin films, which are important in a number of electronics fields, were electrodeposited using a potentiostatic method in low-pH aqueous electrolyte baths with various ion-source concentrations, and the electrical properties of the formed films were investigated after exfoliation from the substrate. The films were electrochemically analyzed by cyclic voltammetry, while surface and cross-sectional morphologies, compositional ratios, and electrical properties were analyzed by scanning electron microscopy, X-ray diffractometry, X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, and Hall-effect experiments. The copper telluride thin films, which were synthesized at various potentials in each bath, exhibit different composition ratios and structures; consequently, they show a variety of electrical and thermoelectric properties, including different electrical conductivities, carrier concentrations, mobilities, and Seebeck coefficients. Among them, the thin film with a 1:1 Cu:Te ratio delivered the highest power factor due to carrier filtering at the interface between the two phases.</jats:p>