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document
SiC MOSFET Micro-Explosion Due to a Single Event Burnout : Analysis at the Device and Die Levels
Abstract
Coq Germanicus, R., Phulpin, T., Rogaume, T., Niskanen, K., Froissart, S., Latry, O., Michez, A., & Lüders, U. (2023). SiC MOSFET Micro-Explosion Due to a Single Event Burnout : Analysis at the Device and Die Levels.In ISTFA 2023 : Conference Proceedings from the 49th International Symposium for Testing and Failure Analysis (pp. 483-490). ASM International. https://doi.org/10.31399/asm.cp.istfa2023p0483