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| Naji, M. |
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Nowakowski, Pawel
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Topics
Publications (9/9 displayed)
- 2022Large Field of View and Artifact-Free Plan View TEM Specimen Preparation by Post-FIB Ar Milling
- 2022An Innovative Technique for Large-Scale Delayering of Semiconductor Devices with Nanometric-Scale Surface Flatness
- 2020Cutting-Edge Sample Preparation from FIB to Ar Concentrated Ion Beam Milling of Advanced Semiconductor Devices
- 2019Ultra-Thinning of Silicon for Backside Fault Isolationcitations
- 2019High Throughput and Multiple Length Scale Sample Preparation for Characterization and Failure Analysis of Advanced Semiconductor Devices
- 2018Narrow-Beam Argon Ion Milling of Ex Situ Lift-Out FIB Specimens Mounted on Various Carbon-Supported Gridscitations
- 2017Advanced Tools and Techniques for Delayering and Cross-Sectioning Semiconductor Devicescitations
- 2011Recent Developments in the Study of Grain Boundary Segregation by Wavelength Dispersive X-Ray Spectroscopy (WDS)
- 2010RuO<sub>2</sub> thin films deposited by spin coating on silicon substrates: pH‐dependence of the microstructure and catalytic propertiescitations
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article
An Innovative Technique for Large-Scale Delayering of Semiconductor Devices with Nanometric-Scale Surface Flatness
Abstract
<jats:title>Abstract</jats:title><jats:p>We describe a fully integrated solution for millimeter-scale delayering of both logic and memory semiconductor devices. The flatness of the delayered device is controlled by an artificial intelligence algorithm, which uses feedback from multiple analytical detectors to control milling parameter adjustments in real time. The result is the precise removal of device layers and a highly planar surface.</jats:p>