| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Nowakowski, Pawel
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (9/9 displayed)
- 2022Large Field of View and Artifact-Free Plan View TEM Specimen Preparation by Post-FIB Ar Milling
- 2022An Innovative Technique for Large-Scale Delayering of Semiconductor Devices with Nanometric-Scale Surface Flatness
- 2020Cutting-Edge Sample Preparation from FIB to Ar Concentrated Ion Beam Milling of Advanced Semiconductor Devices
- 2019Ultra-Thinning of Silicon for Backside Fault Isolationcitations
- 2019High Throughput and Multiple Length Scale Sample Preparation for Characterization and Failure Analysis of Advanced Semiconductor Devices
- 2018Narrow-Beam Argon Ion Milling of Ex Situ Lift-Out FIB Specimens Mounted on Various Carbon-Supported Gridscitations
- 2017Advanced Tools and Techniques for Delayering and Cross-Sectioning Semiconductor Devicescitations
- 2011Recent Developments in the Study of Grain Boundary Segregation by Wavelength Dispersive X-Ray Spectroscopy (WDS)
- 2010RuO<sub>2</sub> thin films deposited by spin coating on silicon substrates: pH‐dependence of the microstructure and catalytic propertiescitations
Places of action
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article
Large Field of View and Artifact-Free Plan View TEM Specimen Preparation by Post-FIB Ar Milling
Abstract
<jats:title>Abstract</jats:title><jats:p>Semiconductor devices are decreasing in dimensions and currently comprise stacks of ultrathin layers as in a spin-transfer torque magnetoresistive random-access memory (STTMRAM) device. For successful characterization by transmission electron microscopy (TEM) for failure analysis and device development, an accurate and controllable thinning of TEM specimens for is desirable. In this work, we combine plan view Ga focused ion beam (FIB) and post-FIB Ar milling preparation to prepare TEM specimens from a STT-MRAM device. Post-FIB Ar milling technique as a final polishing step of plan view TEM specimens was shown to prevent exposure of the tunnel barrier layer that can be damaged by the Ga FIB beam. We discuss the plan view FIB preparation, post-FIB Ar milling step and image analysis of the TEM images.</jats:p>