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Nowakowski, Pawel
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Topics
Publications (9/9 displayed)
- 2022Large Field of View and Artifact-Free Plan View TEM Specimen Preparation by Post-FIB Ar Milling
- 2022An Innovative Technique for Large-Scale Delayering of Semiconductor Devices with Nanometric-Scale Surface Flatness
- 2020Cutting-Edge Sample Preparation from FIB to Ar Concentrated Ion Beam Milling of Advanced Semiconductor Devices
- 2019Ultra-Thinning of Silicon for Backside Fault Isolationcitations
- 2019High Throughput and Multiple Length Scale Sample Preparation for Characterization and Failure Analysis of Advanced Semiconductor Devices
- 2018Narrow-Beam Argon Ion Milling of Ex Situ Lift-Out FIB Specimens Mounted on Various Carbon-Supported Gridscitations
- 2017Advanced Tools and Techniques for Delayering and Cross-Sectioning Semiconductor Devicescitations
- 2011Recent Developments in the Study of Grain Boundary Segregation by Wavelength Dispersive X-Ray Spectroscopy (WDS)
- 2010RuO<sub>2</sub> thin films deposited by spin coating on silicon substrates: pH‐dependence of the microstructure and catalytic propertiescitations
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article
Cutting-Edge Sample Preparation from FIB to Ar Concentrated Ion Beam Milling of Advanced Semiconductor Devices
Abstract
<jats:title>Abstract</jats:title><jats:p>Fast and accurate examination from the bulk to the specific area of the defect in advanced semiconductor devices is critical in failure analysis. This work presents the use of Ar ion milling methods in combination with Ga focused ion beam (FIB) milling as a cutting-edge sample preparation technique from the bulk to specific areas by FIB lift-out without sample-preparation-induced artifacts. The result is an accurately delayered sample from which electron-transparent TEM specimens of less than 15 nm are obtained.</jats:p>