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Ray, M. L.
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Topics
Publications (4/4 displayed)
- 2022Large Field of View and Artifact-Free Plan View TEM Specimen Preparation by Post-FIB Ar Milling
- 2020Cutting-Edge Sample Preparation from FIB to Ar Concentrated Ion Beam Milling of Advanced Semiconductor Devices
- 2019High Throughput and Multiple Length Scale Sample Preparation for Characterization and Failure Analysis of Advanced Semiconductor Devices
- 2017Advanced Tools and Techniques for Delayering and Cross-Sectioning Semiconductor Devicescitations
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article
High Throughput and Multiple Length Scale Sample Preparation for Characterization and Failure Analysis of Advanced Semiconductor Devices
Abstract
<jats:title>Abstract</jats:title><jats:p>Failure analysis of advanced semiconductor devices demands fast and accurate examination from the bulk to the specific area of the defect. Consequently, nanometer resolution and below is critical for finding defects. This work presents the use of argon ion milling methods for multiple length scale sample preparation, micrometer to sub-ångström, without sample preparation- induced artifacts for correlative SEM and TEM failure analysis. The result is an accurately delayered sample from which electron-transparent TEM specimens of less than 20 nm are obtained.</jats:p>