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| Naji, M. |
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| Petrov, R. H. | Madrid |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Nowakowski, Pawel
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Topics
Publications (9/9 displayed)
- 2022Large Field of View and Artifact-Free Plan View TEM Specimen Preparation by Post-FIB Ar Milling
- 2022An Innovative Technique for Large-Scale Delayering of Semiconductor Devices with Nanometric-Scale Surface Flatness
- 2020Cutting-Edge Sample Preparation from FIB to Ar Concentrated Ion Beam Milling of Advanced Semiconductor Devices
- 2019Ultra-Thinning of Silicon for Backside Fault Isolationcitations
- 2019High Throughput and Multiple Length Scale Sample Preparation for Characterization and Failure Analysis of Advanced Semiconductor Devices
- 2018Narrow-Beam Argon Ion Milling of Ex Situ Lift-Out FIB Specimens Mounted on Various Carbon-Supported Gridscitations
- 2017Advanced Tools and Techniques for Delayering and Cross-Sectioning Semiconductor Devicescitations
- 2011Recent Developments in the Study of Grain Boundary Segregation by Wavelength Dispersive X-Ray Spectroscopy (WDS)
- 2010RuO<sub>2</sub> thin films deposited by spin coating on silicon substrates: pH‐dependence of the microstructure and catalytic propertiescitations
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article
Narrow-Beam Argon Ion Milling of Ex Situ Lift-Out FIB Specimens Mounted on Various Carbon-Supported Grids
Abstract
<jats:title>Abstract</jats:title><jats:p>The semiconductor industry recently has been investigating new specimen preparation methods that can improve throughput while maintaining quality. The result has been a combination of focused ion beam (FIB) preparation and ex situ lift-out (EXLO) techniques. Unfortunately, the carbon support on the EXLO grid presents problems if the lamella needs to be thinned once it is on the grid. In this paper, we show how low-energy (&lt; 1 keV), narrow-beam (&lt; 1 μm diameter) Ar ion milling can be used to thin specimens and remove gallium from EXLO FIB specimens mounted on various support grids.</jats:p>