• Nowakowski, Pawel
• Fischione, P. E.
• Ray, M. L.

Abstract

<jats:title>Abstract</jats:title><jats:p>Conventional mechanical sample preparation is a difficult and uncontrolled process that does not allow targeting of a specific depth or layer. Because of the difficulties presented by mechanical sample preparation, there has been an emergence of beam-based techniques for device delayering applications. Cross-sectioning is another commonly used technique used in microelectronics industry investigations; when combined with delayering, one can gain complete knowledge about a device's faults. This paper presents a development in semiconductor device investigation using low energy, broad-beam argon ion milling. The results highlight that broad-beam Ar ion milling produces excellent surface quality, which allows high resolution scanning electron microscope observation and energy dispersive spectrometry analyses, even at low energy.</jats:p>

Topics

• impedance spectroscopy
• surface
• grinding
• semiconductor
• milling
• spectrometry
• sectioning