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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Jadkar, Sandesh
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Publications (5/5 displayed)
- 2021Deposition Time-dependent Study of Structural and Optical Properties of PbS Thin Films Grown by CBD Method
- 2021Structural, electronic, and optical properties of lead-free halide double perovskite Rb2AgBiI6: a combined experimental and DFT studycitations
- 2020Highly stable and Pb-free bismuth-based perovskites for photodetector applicationscitations
- 2020Photoelectrochemical investigation on the cadmium sulfide (CdS) thin films prepared using spin coating techniquecitations
- 2020Structural, optoelectronic, and photoelectrochemical investigation of CdSe NC's prepared by hot injection methodcitations
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article
Structural, optoelectronic, and photoelectrochemical investigation of CdSe NC's prepared by hot injection method
Abstract
In this study, we report the synthesis and characterization of CdSe nanocrystals (NC's) by facile Hot injection (HI) method. The formation of CdSe NC's was confirmed by x-ray diffraction (XRD), Raman spectroscopy, and x-ray photoelectron spectroscopy (XPS). The optical properties were analyzed by UV-visible and photoluminescence (PL) spectroscopy shows an excitonic peak at 600 nm in UV-Vis spectra corresponds to the band gap of ~ 2 eV favorable for optoelectronic device applications. The Photoelectrochemical (PEC) performance of CdSe thin film prepared by spin coating demonstrates a rise of photocurrent density (Jsc = 0.081 µAcm-2) after illumination. The Mott-Schottky (MS) and electrochemical impedance spectroscopy (EIS) measurements were further carried out to understand intrinsic properties namely the type of conductivity, flat band potential, charge carrier density (ND), charge transfer resistance, and recombination lifetime. The n-type conductivity, the charge carrier density of ND = 1.292 x 1016 cm-2, and recombination lifetime of 32.4 µs suggest the ideal behavior of CdSe NC's for device quality photoelectrodes.