| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Rensmo, Håkan
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (20/20 displayed)
- 2024Composition dependence of X-ray stability and degradation mechanisms at lead halide perovskite single crystal surfacescitations
- 2024Electronic structure characterization by photoelectron spectroscopy of BaZrS3 perovskite powder and thin filmcitations
- 2023Direct measurements of interfacial photovoltage and band alignment in perovskite solar cells using hard X-ray photoelectron spectroscopycitations
- 2023Interplay between Growth Mechanism, Materials Chemistry, and Band Gap Characteristics in Sputtered Thin Films of Chalcogenide Perovskite BaZrS3citations
- 2022Experimental and Theoretical Core Level and Valence Band Analysis of Clean Perovskite Single Crystal Surfacescitations
- 2022Experimental and Theoretical Core Level and Valence Band Analysis of Clean Perovskite Single Crystal Surfacescitations
- 2022Atomic Layer Grown Zinc–Tin Oxide as an Alternative Buffer Layer for Cu2ZnSnS4-Based Thin Film Solar Cells: Influence of Absorber Surface Treatment on Buffer Layer Growthcitations
- 2022Surface/Interface Effects by Alkali Postdeposition Treatments of (Ag,Cu)(In,Ga)Se2 Thin Film Solar Cellscitations
- 2022Atomic Layer Grown Zinc-Tin Oxide as an Alternative Buffer Layer for Cu2ZnSnS4-Based Thin Film Solar Cells : Influence of Absorber Surface Treatment on Buffer Layer Growthcitations
- 2021Nonlocal Interactions in the Double Perovskite Sr2FeMoO6 from Core-Level X‐ray Spectroscopycitations
- 2020Simple Method for Efficient Slot-Die Coating of MAPbI(3) Perovskite Thin Films in Ambient Air Conditionscitations
- 2020Tuning the Bandgap in Silver Bismuth Iodide Materials by Partly Substituting Bismuth with Antimony for Improved Solar Cell Performancecitations
- 2020Origin of itinerant carriers in antiferromagnetic LaFe1-xMoxO3 studied by x-ray spectroscopiescitations
- 2018Maximizing and stabilizing luminescence from halide perovskites with potassium passivationcitations
- 2018Maximizing and stabilizing luminescence from halide perovskites with potassium passivation
- 2018Potassium- and Rubidium-Passivated Alloyed Perovskite Films: Optoelectronic Properties and Moisture Stability.
- 2018Dedoping of Lead Halide Perovskites Incorporating Monovalent Cations.
- 2017Partially Reversible Photoinduced Chemical Changes in a Mixed-Ion Perovskite Material for Solar Cellscitations
- 2015Chemical engineering of methylammonium lead iodide/bromide perovskites : tuning of opto-electronic properties and photovoltaic performancecitations
- 2012Nanosilicon electrodes for lithium-ion batteries: Interfacial mechanisms studied by hard and soft X-ray photoelectron spectroscopycitations
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document
Electronic structure characterization by photoelectron spectroscopy of BaZrS3 perovskite powder and thin film
Abstract
<jats:p>Chalcogenide perovskites exhibit optoelectronic properties that position them as breakthrough materials in the field of photovoltaics. We report a detailed investigation into the electronic structure and chemical properties (XPS) of polycrystalline BaZrS3 perovskite powder, complemented by an analysis of their geometric atomic arrangement using XRD and XAS. The results are compared with measurements on sputtered polycrystalline BaZrS3 thin film prepared through rapid thermal processing. Moreover, we establish a correlation between the experimental valence band spectra and the theoretical density of states derived from DFT calculations, thereby discerning the orbital constituents involved. While bulk characterization confirms the good quality of the powder, depth-profiling achieved by photoelectron spectroscopy utilizing Al Kα (1.487 keV) and Ga Kα (9.25 keV) radiations shows that, regardless of the fabrication method, the oxidation effects extend beyond 10 nm from the sample surface, with specifically zirconium oxides occurring deeper than the oxidized sulfur species. The hard X-ray photoelectron spectroscopy study on the powder and thin film detects signals with minimal contamination contributions and allows the determination of the valence band maximum position with respect to the Fermi level. Our analysis gives an improved understanding of the electronic structure of BaZrS3, linking the electronic structure of this semiconductor to the fundamental bonding properties of the material, providing knowledge which is crucial for interfaces development, and consequently, for device integration.</jats:p>