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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Alsharekh, Mohammed F.
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article
Preparation and characterization of graphene-based fluorine doped tin dioxide thin films via spray pyrolysis technique
Abstract
<jats:title>Abstract</jats:title><jats:p>In this work, fluorine-doped tin oxide (FTO) and graphene/fluorine-doped (G-FTO) thin films were prepared using a low-cost spray pyrolysis method at a substrate temperature of 500 °C. For the FTOs, stannous chloride was dissolved in methanol and acetic acid to form the precursor solution. A 0.05 mole (M) of hydrofluoric acid was added to the precursor as an n-type impurity. The FTO thin film has an optical transmittance of 82% and electrical sheet resistance of 15 Ω/□. By meticulously integrating graphene into the optimal precursor solution of FTO, a significant improvement in the electrical conductivity of the prepared samples was achieved, leading to a reduction in the sheet resistance to 8 Ω/□ with a suitable optical transmittance of 79%. Structural, morphological, optical, and electrical properties of the prepared sample are investigated using X-ray diffraction, scanning electron microscope, UV spectroscopy, and four-point probe technique. The best performance of the FTO thin films is achieved utilizing 2.5 µmole/L of fluorine concentration at a substrate temperature of 500°C for a spraying exposer time of 20 min. The prepared sample has an electrical sheet resistance of 15 Ω/□, optical transmittance of 82%, and figure-of-merit of 91.2×10<jats:sup>−4</jats:sup> Ω<jats:sup>−1</jats:sup>.The addition of 0.4 µmole/L of graphene to the optimum FTO samples enhances the performance by a remarkable reduction in the electrical the sheet resistance to 8 Ω/□ and an acceptable reduction in the optical transmittance of 79%. The overall value of the figure-of-merit increased to 118.3×10<jats:sup>−4</jats:sup> Ω<jats:sup>−1</jats:sup>. The achieved results offer a high potential for adopting the prepared films for electronic and optoelectronic applications.</jats:p>