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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Firek, Piotr
Warsaw University of Technology
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (19/19 displayed)
- 2024The Preparation and Properties of a Hydrogen-Sensing Field-Effect Transistor with a Gate of Nanocomposite C-Pd Film
- 2020Hydrogen sensor based on field effect transistor with C-Pd layercitations
- 2020Field effect transistor with thin AlOxNy film as gate dielectric
- 2019Technology and characterization of ISFET structures with graphene membranecitations
- 2019Influence of annealing on electronic properties of thin AlN films deposited by magnetron sputtering method on silicon substratescitations
- 2017SEM and Raman studies of CNT films on porous Sicitations
- 2016Comparison of the structural and corrosion properties of the graphene/SiN(200) coating system deposited on titanium alloy surfaces covered with SiN transition layerscitations
- 2016Manufacturing of HfOxNy films using reactive magnetron sputtering for ISFET application
- 2015Sensing properties of periodic stack of nano-films deposited with various vapor-based techniques on optical fiber end-facecitations
- 2015Influence of Substrate Type on Structure of C-Pd Thin Filmscitations
- 2013Application of scanning microscopy to study correlation between thermal properties and morphology of BaTiO3 thin filmscitations
- 2013Plasma etching of aluminum nitride thin films prepared by magnetron sputtering method
- 2013Annealing time effects on the surface morphology of C–Pd films prepared on silicon covered with SiO2
- 2013Reactive impulse plasma ablation deposited barium titanate thin films on siliconcitations
- 2013Characterization of thin Gd2O3 magnetron sputtered layers citations
- 2011Electronic properties of BaTiO<sub>3</sub>/4H-SiC interfacecitations
- 2011Mechanical and Thermal Properties of SiC – Ceramics Substrate Interface
- 2009Electric Characterization and Selective Etching of Aluminum Oxidecitations
- 2007Barium titanate thin films plasma etch rate as a function of the applied RF power and Ar/CF<inf>4</inf> mixture gas mixing ratiocitations
Places of action
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article
Hydrogen sensor based on field effect transistor with C-Pd layer
Abstract
ISFET (Ion Sensitive Field Effect Transistors) microsensors are widely used for pH measurements as well as analytical and biomedical applications. At the same time, ISFET is a good candidate for testing various materials for their applications in sensitive membranes. For example, hydrogen sensitive carbonaceous films containing Pd nanocrystallites (C–Pd) make this material very interesting for sensor applications. A cost effective silicon technology was selected to fabricate n-channel transistors. The structures were coupled to specially designed double-sided PCB (Printed Circuit Board) holder. The holder enables assembly of the structure as part of an automatic stand. The last step of production of MIS structures was deposition of the C–Pd layer. The C–Pd films were fabricated by the Physical Vapor Deposition (PVD) method in which C60 and palladium acetate were evaporated. Electrical resistance of structures with C–Pd films was measured during their interaction with hydrogen. Finally, a new type of highly sensitive FET hydrogen sensor with C–Pd layer was demonstrated and characterized.