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Sochacki, Mariusz
Warsaw University of Technology
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (9/9 displayed)
- 2024The Preparation and Properties of a Hydrogen-Sensing Field-Effect Transistor with a Gate of Nanocomposite C-Pd Film
- 2021TiAl-based Ohmic Contacts to p-type 4H-SiC
- 2020Development of Assembly Techniques for Connection of AlGaN/GaN/Si Chips to DBC substratecitations
- 2020Ti and TiAl-based ohmic contacts to 4H-SiCcitations
- 2018Influence of Atomic Layer Deposition Temperature on the Electrical Properties of Al/ZrO2/SiO2/4H‐SiC Metal‐Oxide Semiconductor Structurescitations
- 2016Electrical characterization of ZnO/4H-SiC n–p heterojunction diodecitations
- 2015Depth Profile Analysis of Phosphorus Implanted SiC Structurescitations
- 2011Electronic properties of BaTiO<sub>3</sub>/4H-SiC interfacecitations
- 2011Mechanisms of carriers transport in Ni/n-SiC, Ti/n-SiC ohmic contactscitations
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article
TiAl-based Ohmic Contacts to p-type 4H-SiC
Abstract
This paper describes successfully formed ohmic contacts to p-type 4H-SiC based on titanium-aluminum alloys. Four different metallization structures were examined, varying in aluminum layer thickness (25, 50, 75, 100 nm) and with constant thickness of the titanium layer (50 nm). Structures were annealed within the temperature range of 800°C - 1100°C and then electrically characterized. The best electrical parameters and linear, ohmic character of contacts demonstrated structures with Al layer thickness equal or greater than that of Ti layer and annealed at temperatures of 1000°C or higher.