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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Golim, Obert
Aalto University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (4/4 displayed)
- 2024Low-Temperature Wafer-Level Bonding with Cu-Sn-In Solid Liquid Interdiffusion for Microsystem Packagingcitations
- 2024Investigative characterization of delamination at TiW-Cu interface in low-temperature bonded interconnectscitations
- 2023Achieving low-temperature wafer level bonding with Cu-Sn-In ternary at 150 °Ccitations
- 2021Low-temperature Metal Bonding for Optical Device Packagingcitations
Places of action
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conferencepaper
Low-temperature Metal Bonding for Optical Device Packaging
Abstract
Low-temperature solid-liquid interdiffusion (SLID) bonding is an attractive alternative for the packaging of optical devices. It reduces global residual stress build up caused by differences in coefficient of thermal expansion (CTE) at elevated temperatures. This work applied the Cu-Sn-In-based SLID bonding method to bond silicon and optically transparent materials at 200 °C. Experimental results show a successful bonding with minor unavoidable misalignment from the CTE mismatch and major misalignment from the bonding alignment process. Microstructural analysis shows the intermetallic compound consists only of Cu6(Sn,In)5 on the bond that is thermally stable up to 600 °C ; Peer reviewed