Materials Map

Discover the materials research landscape. Find experts, partners, networks.

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The Materials Map is an open tool for improving networking and interdisciplinary exchange within materials research. It enables cross-database search for cooperation and network partners and discovering of the research landscape.

The dashboard provides detailed information about the selected scientist, e.g. publications. The dashboard can be filtered and shows the relationship to co-authors in different diagrams. In addition, a link is provided to find contact information.

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Materials Map under construction

The Materials Map is still under development. In its current state, it is only based on one single data source and, thus, incomplete and contains duplicates. We are working on incorporating new open data sources like ORCID to improve the quality and the timeliness of our data. We will update Materials Map as soon as possible and kindly ask for your patience.

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Aalto University

in Cooperation with on an Cooperation-Score of 37%

Topics

Publications (9/9 displayed)

  • 2024Electromigration Reliability of Cu3Sn Microbumps for 3D Heterogeneous Integrationcitations
  • 2024Fatigue Crack Networks in Die-Attach Layers of IGBT Modules Under a Power Cycling Test4citations
  • 2023Impact of Inherent Design Limitations for Cu–Sn SLID Microbumps on Its Electromigration Reliability for 3D ICs16citations
  • 2023Achieving low-temperature wafer level bonding with Cu-Sn-In ternary at 150 °C14citations
  • 2022Finite element simulation of solid-liquid interdiffusion bonding process: Understanding process dependent thermomechanical stress10citations
  • 2022Finite element simulation of solid-liquid interdiffusion bonding process10citations
  • 2021Investigation of seal frame geometry on Sn squeeze-out in Cu-Sn SLID bonds5citations
  • 2021Low-temperature Metal Bonding for Optical Device Packaging7citations
  • 2015Spin-coatable, photopatternable magnetic nanocomposite thin films for MEMS device applications8citations

Places of action

Chart of shared publication
Windemuth, Thilo
1 / 1 shared
Paulasto-Kröckel, Mervi
4 / 31 shared
Kögel, Michael
1 / 1 shared
Vuorinen, Vesa
7 / 48 shared
Brand, Sebastian
2 / 5 shared
Ross, Glenn
6 / 35 shared
Grosse, Christian
1 / 4 shared
Paulasto-Krockel, Mervi
3 / 10 shared
Liu, Shenyi
1 / 2 shared
Fredrikson, Olli
1 / 1 shared
Lutz, Josef
1 / 1 shared
Liu, Xing
1 / 3 shared
Wernicke, Tobias
1 / 3 shared
Pawlak, Marta
1 / 2 shared
Golim, Obert
2 / 4 shared
Nguyen, Hoang-Vu
1 / 9 shared
Hoivik, Nils
1 / 2 shared
Roy, Avisek
1 / 5 shared
Papatzacos, Phillip
1 / 3 shared
Aasmundtveit, Knut E.
1 / 3 shared
Poddar, P.
1 / 1 shared
Palaparthy, V.
1 / 1 shared
Sharan, C.
1 / 1 shared
Kandpal, M.
1 / 1 shared
Rao, V. Ramgopal
1 / 4 shared
Chart of publication period
2024
2023
2022
2021
2015

Co-Authors (by relevance)

  • Windemuth, Thilo
  • Paulasto-Kröckel, Mervi
  • Kögel, Michael
  • Vuorinen, Vesa
  • Brand, Sebastian
  • Ross, Glenn
  • Grosse, Christian
  • Paulasto-Krockel, Mervi
  • Liu, Shenyi
  • Fredrikson, Olli
  • Lutz, Josef
  • Liu, Xing
  • Wernicke, Tobias
  • Pawlak, Marta
  • Golim, Obert
  • Nguyen, Hoang-Vu
  • Hoivik, Nils
  • Roy, Avisek
  • Papatzacos, Phillip
  • Aasmundtveit, Knut E.
  • Poddar, P.
  • Palaparthy, V.
  • Sharan, C.
  • Kandpal, M.
  • Rao, V. Ramgopal
OrganizationsLocationPeople

conferencepaper

Low-temperature Metal Bonding for Optical Device Packaging

  • Paulasto-Kröckel, Mervi
  • Vuorinen, Vesa
  • Tiwary, Nikhilendu
  • Ross, Glenn
  • Golim, Obert
Abstract

Low-temperature solid-liquid interdiffusion (SLID) bonding is an attractive alternative for the packaging of optical devices. It reduces global residual stress build up caused by differences in coefficient of thermal expansion (CTE) at elevated temperatures. This work applied the Cu-Sn-In-based SLID bonding method to bond silicon and optically transparent materials at 200 °C. Experimental results show a successful bonding with minor unavoidable misalignment from the CTE mismatch and major misalignment from the bonding alignment process. Microstructural analysis shows the intermetallic compound consists only of Cu6(Sn,In)5 on the bond that is thermally stable up to 600 °C ; Peer reviewed

Topics
  • impedance spectroscopy
  • compound
  • thermal expansion
  • Silicon
  • intermetallic
  • interdiffusion