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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Tiwary, Nikhilendu
Aalto University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (9/9 displayed)
- 2024Electromigration Reliability of Cu3Sn Microbumps for 3D Heterogeneous Integration
- 2024Fatigue Crack Networks in Die-Attach Layers of IGBT Modules Under a Power Cycling Testcitations
- 2023Impact of Inherent Design Limitations for Cu–Sn SLID Microbumps on Its Electromigration Reliability for 3D ICscitations
- 2023Achieving low-temperature wafer level bonding with Cu-Sn-In ternary at 150 °Ccitations
- 2022Finite element simulation of solid-liquid interdiffusion bonding process: Understanding process dependent thermomechanical stresscitations
- 2022Finite element simulation of solid-liquid interdiffusion bonding processcitations
- 2021Investigation of seal frame geometry on Sn squeeze-out in Cu-Sn SLID bondscitations
- 2021Low-temperature Metal Bonding for Optical Device Packagingcitations
- 2015Spin-coatable, photopatternable magnetic nanocomposite thin films for MEMS device applicationscitations
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document
Investigation of seal frame geometry on Sn squeeze-out in Cu-Sn SLID bonds
Abstract
Cu-Sn SLID is an increasingly popular bonding technique with applications in such as hermetic sealing of microbolometers. A moderate bonding pressure is necessary to compensate for the surface roughness of the electroplated layers and to break the Sn oxide layer, thereby reducing the risk of voiding. However, such bonding pressures increase the risk for Sn squeeze-out during the bonding process, which has the potential to destroy MEMS or ROIC devices. To prevent this potential issue, an alternative bondline geometry consisting of 3x50µm wide bond rails and 25µm wide gaps was manufactured and compared to a continuous 200µm bondline by using nondestructive IR imaging, cross-sectional microscopy, and die-shear testing. High shear strength values of 31±9MPa and 43±18MPa were obtained for continuous and railed seal frames respectively. The Sn squeeze-out distance beyond the intended bondline was, on average, reduced by 60% when the railed geometry is employed. A reduction in peak squeeze-out distance from 188µm to 54µm was also observed.