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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Fogarassy, Zsolt
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Topics
Publications (7/7 displayed)
- 2024Irreversible evolution of dislocation pile-ups during cyclic microcantilever bendingcitations
- 2023Irreversible evolution of dislocation pile-ups during cyclic microcantilever bending
- 2022High-temperature evolution of diamond-SiC composites
- 2022The Effect of Femtosecond Laser Irradiation and Plasmon Field on the Degree of Conversion of a UDMA-TEGDMA Copolymer Nanocomposite Doped with Gold Nanorodscitations
- 2021Highly Homogeneous Current Transport in Ultra-Thin Aluminum Nitride (AlN) Epitaxial Films on Gallium Nitride (GaN) Deposited by Plasma Enhanced Atomic Layer Depositioncitations
- 2020Graphene added multilayer ceramic sandwich (GMCS) composites: Structure, preparation and propertiescitations
- 2016Shear-Coupled Grain Growth and Texture Development in a Nanocrystalline Ni-Fe Alloy during Cold Rollingcitations
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article
High-temperature evolution of diamond-SiC composites
Abstract
<jats:p>Diamond-SiC composites are attractive for improving the catastrophic fracturebehaviour of SiC. However, fundamental knowledge is missing about thestructure of this system and the mechanism of diamond graphitization. Weused spark plasma sintering to study the diamond-Si-SiC system between 1600and 2000?C in the function of nanocrystalline (ND) and microcrystalline(MD) diamond addition as well as the quantity of Sibonding phase. Increasingsintering temperature induces intense graphitization and formation ofnano-onions, few-layered graphene and well-ordered graphite in the preparedcomposites at elevated temperature. High resolution transmission electronmicroscopy study demonstrates the occurrence of the previously erroneouslyidentified 5H-SiC polytype in the samples prepared at 2000?C. Regardless ofSi and diamond contents, SiC formation is not confirmed even at hightemperature.</jats:p>