• Milivojevic, Dusan
• Blanusa, Jovan
• Spasojevic, Vojislav
• Kusigerski, Vladan
• Babic-Stojic, Branka

Abstract

<jats:p>Semiconductor Zn-Mn-O crystallites were synthesized by a solid state reaction method starting from the thermal decomposition of the appropriate oxalates. Samples were thermally treated in air at temperatures ranging from 400 to 900?C. The nominal concentrations of manganese werex = 0.01, 0.02, 0.04 and 0.10. The samples were investigated by the X-ray powder diffraction method, magnetization measurements and by electron paramagnetic resonance. X-ray diffractgrams show a dominant wurtzite structure of Zn-Mn-O. Room temperature ferromagnetism was observed in Zn-Mn-O samples with manganese concentrations x ? 0.04, thermally treated at low temperature (500?C). The saturation magnetiza?tion for the sample with x = 0.01 was 0.05 ?B/Mn. The room temperature ferromagnetism seems to be due to the diffusion of Zn into the Mn-oxides grains.</jats:p>

Topics

• grain
• semiconductor
• Manganese
• magnetization
• thermal decomposition
• diffraction method