| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Selberherr, Siegfried
TU Wien
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (13/13 displayed)
- 2022Spin Transfer Torque Evaluation Based on Coupled Spin and Charge Transport: A Finite Element Method Approach
- 2020Influence of Current Redistribution in Switching Models for Perpendicular STT-MRAMcitations
- 2016Enhancement of Electron Spin Relaxation Time in Thin SOI Films by Spin Injection Orientation and Uniaxial Stresscitations
- 2014Microstructural Impact on Electromigration: A TCAD Studycitations
- 2013Multiple Purpose Spin Transfer Torque Operated Devices
- 2013strain induced reduction of surface roughness dominated spin relaxation in mosfetscitations
- 2011perspectives of silicon for future spintronic applications from the peculiarities of the subband structure in thin films
- 2011Modeling Electromigration Lifetimes of Copper Interconnectscitations
- 2009valley splitting in thin silicon films from a two band k p model
- 2009The Effect of Microstructure on Electromigration-Induced Failure Developmentcitations
- 2009thickness dependence of the effective masses in a strained thin silicon filmcitations
- 2009Analysis of Electromigration in Dual-Damascene Interconnect Structures
- 2007Electromigration Modeling for Interconnect Structures in Microelectronics
Places of action
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article
Microstructural Impact on Electromigration: A TCAD Study
Abstract
<jats:p>Current electromigration models used for simulation and analysis ofinterconnect reliability lack the appropriate description of metalmicrostructure and consequently have a very limited predictive capability.Therefore, the main objective of our work was obtaining more sophisticatedelectromigration models. The problem is addressed through a combination ofdifferent levels of atomistic modeling and already available continuum levelmacroscopic models. A novel method for an ab initio calculation of theeffective valence for electromigration is presented and its application onthe analysis of EM behavior is demonstrated. Additionally, a simpleanalytical model for the early electromigration lifetime is obtained. We haveshown that its application gives a reasonable estimate for the earlyelectromigration failures including the effect of microstructure.</jats:p>