| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Johnson, Bradley R.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (18/18 displayed)
- 2019Solid Secondary Waste Immobilization in Cementitious Waste Forms at the Hanford Site - 19081
- 2014Preliminary Phase Field Computational Model Development
- 2013Sublimation-Condensation of Multiscale Tellurium Structurescitations
- 2009Electromagnetic material changes for remote detection and monitoring: a feasibility study: Progress report
- 2009DC Ionization Conductivity of Amorphous Semiconductors for Radiation Detection Applicationscitations
- 2008ASGRAD FY07 Annual Report
- 2008FY 2008 Infrared Photonics Final Report
- 2007Engineered SMR catalysts based on hydrothermally stable, porous, ceramic supports for microchannel reactorscitations
- 2007FY06 Annual Report: Amorphous Semiconductors for Gamma Radiation Detection (ASGRAD)
- 2007Differential etching of chalcogenides for infrared photonic waveguide structurescitations
- 2006Summary of Chalcogenide Glass Processing: Wet-Etching and Photolithography
- 2006Pressure-temperature dependence of nanowire formation in the arsenic-sulfur system
- 2005Microstructural and Microchemical Characterization of Primary-Side Cracks in an Alloy 600 Nozzle Head Penetration and its Alloy 182 J-Weld from the Davis-Besse Reactor Vessel
- 2005FY 2005 Miniature Spherical Retroreflectors Final Report
- 2005FY 2005 Infrared Photonics Final Report
- 2004Laser Writing in Arsenic Trisulfide Glass
- 2004FY 2004 Infrared Photonics Final Report
- 2004Chalcogenide glasses and structures for quantum sensing
Places of action
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report
FY06 Annual Report: Amorphous Semiconductors for Gamma Radiation Detection (ASGRAD)
Abstract
We describe progress in the development of new materials for portable, room-temperature, gamma-radiation detection at Pacific Northwest National Laboratory at the Hanford Site in Washington State. High Z, high resistivity, amorphous semiconductors are being designed for use as solid-state detectors at near ambient temperatures; principles of operation are analogous to single-crystal semiconducting detectors. Amorphous semiconductors have both advantages and disadvantages compared to single crystals, and this project is developing methods to mitigate technical problems and design optimized material for gamma detection. Several issues involved in the fabrication of amorphous semiconductors are described, including reaction thermodynamics and kinetics, the development of pyrolytic coating, and the synthesis of ingots. The characterization of amorphous semiconductors is described, including sectioning and polishing protocols, optical microscopy, X-ray diffraction, scanning electron microscopy, optical spectroscopy, particle-induced X-ram emission, Rutherford backscattering, and electrical testing. Then collaboration with the University of Illinois at Urbana-Champaign is discussed in the areas of Hall-effect measurements and current voltage data. Finally, we discuss the strategy for continuing the program.