| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Johnson, Bradley R.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (18/18 displayed)
- 2019Solid Secondary Waste Immobilization in Cementitious Waste Forms at the Hanford Site - 19081
- 2014Preliminary Phase Field Computational Model Development
- 2013Sublimation-Condensation of Multiscale Tellurium Structurescitations
- 2009Electromagnetic material changes for remote detection and monitoring: a feasibility study: Progress report
- 2009DC Ionization Conductivity of Amorphous Semiconductors for Radiation Detection Applicationscitations
- 2008ASGRAD FY07 Annual Report
- 2008FY 2008 Infrared Photonics Final Report
- 2007Engineered SMR catalysts based on hydrothermally stable, porous, ceramic supports for microchannel reactorscitations
- 2007FY06 Annual Report: Amorphous Semiconductors for Gamma Radiation Detection (ASGRAD)
- 2007Differential etching of chalcogenides for infrared photonic waveguide structurescitations
- 2006Summary of Chalcogenide Glass Processing: Wet-Etching and Photolithography
- 2006Pressure-temperature dependence of nanowire formation in the arsenic-sulfur system
- 2005Microstructural and Microchemical Characterization of Primary-Side Cracks in an Alloy 600 Nozzle Head Penetration and its Alloy 182 J-Weld from the Davis-Besse Reactor Vessel
- 2005FY 2005 Miniature Spherical Retroreflectors Final Report
- 2005FY 2005 Infrared Photonics Final Report
- 2004Laser Writing in Arsenic Trisulfide Glass
- 2004FY 2004 Infrared Photonics Final Report
- 2004Chalcogenide glasses and structures for quantum sensing
Places of action
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report
Summary of Chalcogenide Glass Processing: Wet-Etching and Photolithography
Abstract
This report describes a study designed to explore the different properties of two different chalcogenide materials, As2S3 and As24S38Se38, when subjected to photolithographic wet-etching techniques. Chalcogenide glasses are made by combining chalcogen elements S, Se, and Te with Group IV and/or V elements. The etchant was selected from the literature and was composed of sodium hydroxide, isopropyl alcohol, and deionized water and the types of chalcogenide glass for study were As2S3 and As24S38Se38. The main goals here were to obtain a single variable etch rate curve of etch depth per time versus NaOH overall solution concentration in M and to see the difference in etch rate between a given etchant when used on the different chalcogenide stoichiometries. Upon completion of these two goals, future studies will begin to explore creating complex, integrated photonic devices via these methods.