| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Azarov, Alexander
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (20/20 displayed)
- 2023High versus low energy ion irradiation impact on functional properties of PLD-grown alumina coatings ; ENEngelskEnglishHigh versus low energy ion irradiation impact on functional properties of PLD-grown alumina coatingscitations
- 2023Tuning electrical properties in Ga2O3 polymorphs induced with ion beamscitations
- 2023A peridynamic elasto-plastic damage model for ion-irradiated materials ; ENEngelskEnglishA peridynamic elasto-plastic damage model for ion-irradiated materialscitations
- 2023Reactive pulsed direct current magnetron sputtering deposition of semiconducting yttrium oxide thin film in ultralow oxygen atmosphere: A spectroscopic and structural investigation of growth dynamics ; ENEngelskEnglishReactive pulsed direct current magnetron sputtering deposition of semiconducting yttrium oxide thin film in ultralow oxygen atmosphere: A spectroscopic and structural investigation of growth dynamicscitations
- 2023Tuning electrical properties in Ga2O3 polymorphs induced with ion beams ; ENEngelskEnglishTuning electrical properties in Ga2O3 polymorphs induced with ion beamscitations
- 2023The Fe addition as an effective treatment for improving the radiation resistance of fcc NixFe1-x single-crystal alloys ; ENEngelskEnglishThe Fe addition as an effective treatment for improving the radiation resistance of fcc NixFe1-x single-crystal alloyscitations
- 2023Tuning defect-related optical bands by channeling implants in semiconductors ; ENEngelskEnglishTuning defect-related optical bands by channeling implants in semiconductors
- 2022Combined Au/Ag nanoparticle creation in ZnO nanopillars by ion implantation for optical response modulation and photocatalysis ; ENEngelskEnglishCombined Au/Ag nanoparticle creation in ZnO nanopillars by ion implantation for optical response modulation and photocatalysiscitations
- 2022Radiation tolerance of GaN: The balance between radiation-stimulated defect annealing and defect stabilization by implanted atoms ; ENEngelskEnglishRadiation tolerance of GaN: The balance between radiation-stimulated defect annealing and defect stabilization by implanted atomscitations
- 2022Disorder-Induced Ordering in Gallium Oxide Polymorphs ; ENEngelskEnglishDisorder-Induced Ordering in Gallium Oxide Polymorphscitations
- 2022Comparative study of radiation tolerance of GaN and Ga2O3 polymorphs ; ENEngelskEnglishComparative study of radiation tolerance of GaN and Ga2O3 polymorphscitations
- 2021Activation energy of silicon diffusion in gallium oxide: Roles of the mediating defects charge states and phase modificationcitations
- 2021Effects of La2O3 Addition into CaO-SiO2 Slag: Structural Evolution and Impurity Separation from Si-Sn Alloycitations
- 2020Phosphorus separation from metallurgical-grade silicon by magnesium alloying and acid leachingcitations
- 2019Effects of Substrate and Post-Deposition Annealing on Structural and Optical Properties of (ZnO)1-x(GaN)x Filmscitations
- 2019Lateral Straggling of Ion Implantation Distributions in 4H-SiC Investigated by SIMScitations
- 2019Role of Nitrogen in Defect Evolution in Zinc Oxide: STEM−EELS Nanoscale Investigationscitations
- 2018Boron-doping of cubic SiC for intermediate band solar cells: a scanning transmission electron microscopy studycitations
- 2011Cd diffusion and thermal stability of CdZnO/ZnO heterostructurescitations
- 2011Understanding phase separation in ZnCdO by a combination of structural and optical analysiscitations
Places of action
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article
Boron-doping of cubic SiC for intermediate band solar cells: a scanning transmission electron microscopy study
Abstract
<jats:p>Boron (B) has the potential for generating an intermediate band in cubic silicon carbide (3C-SiC), turning this material into a highly efficient absorber for single-junction solar cells. The formation of a delocalized band demands high concentration of the foreign element, but the precipitation behavior of B in the 3C polymorph of SiC is not well known. Here, probe-corrected scanning transmission electron microscopy and secondary-ion mass spectrometry are used to investigate precipitation mechanisms in B-implanted 3C-SiC as a function of temperature. Point-defect clustering was detected after annealing at 1273 K while stacking faults, B-rich precipitates and dislocation networks developed in the 1573 - 1773 K range. The precipitates adopted the rhombohedral B<jats:sub>13</jats:sub>C<jats:sub>2</jats:sub> structure and trapped B up to 1773 K. Above this temperature, higher solubility reduced precipitation and free B diffused out of the implantation layer. Dopant concentrations of <jats:inline-formula><jats:alternatives><jats:tex-math>{10^{19}\:{{at.cm}}^{-3}}</jats:tex-math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mstyle mathvariant="bold"><mml:msup><mml:mn>10</mml:mn><mml:mn>19</mml:mn></mml:msup><mml:mspace width="0.222em" /><mml:msup><mml:mstyle mathvariant="normal"><mml:mstyle mathvariant="bold"><mml:mi>ᵁA</mml:mi><mml:mi>ᵂD</mml:mi><mml:mi>.</mml:mi><mml:mi>ᵁC</mml:mi><mml:mi>ᵂ6</mml:mi></mml:mstyle></mml:mstyle><mml:mrow><mml:mo>−</mml:mo><mml:mn>3</mml:mn></mml:mrow></mml:msup></mml:mstyle></mml:math></jats:alternatives></jats:inline-formula> were achieved at 1873 K.</jats:p>