| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Frare, Bruno L. Segat
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (1/1 displayed)
Places of action
| Organizations | Location | People |
|---|
document
On-chip hybrid erbium-doped tellurium oxide-silicon nitride distributed Bragg reflector lasers
Abstract
<jats:title>Abstract</jats:title><jats:p>We demonstrate integrated on-chip erbium-doped tellurite (TeO<jats:sub>2</jats:sub>:Er<jats:sup>3+</jats:sup>) waveguide lasers fabricated on a wafer-scale silicon nitride platform. A 0.352-µm-thick TeO<jats:sub>2</jats:sub>:Er<jats:sup>3+</jats:sup> coating was deposited as an active medium on 0.2-µm-thick, 1.2- and 1.6-µm-wide, and 22-mm-long silicon nitride waveguides with sidewall-patterned asymmetrical distributed Bragg reflector cavities. The lasers yield efficiencies between 0.06 and 0.36%, lasing threshold ranging from 13 to 26 mW, and emission within the C-band (1530–1565 nm). These results establish new opportunities for this hybrid tellurite glass-silicon nitride platform, such as the co-integration of passive components and light sources in the telecom window, and provide the foundation for the development of efficient, compact, and high-output-power on-chip erbium-doped tellurite waveguide lasers.</jats:p>