| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Funakubo, Hiroshi
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Topics
Publications (9/9 displayed)
- 2022Nanoscale mapping to assess the asymmetry of local C–V curves obtained from ferroelectric materialscitations
- 2019Strain-induced resistance change in V2O3 films on piezoelectric ceramic diskscitations
- 2019Strain-induced resistance change in V 2 O 3 films on piezoelectric ceramic diskscitations
- 2017Direct Imaging of the Relaxation of Individual Ferroelectric Interfaces in a Tensile‐Strained Filmcitations
- 2015Transport properties and c/a ratio of V2O3 thin films grown on C- and R-plane sapphire substrates by pulsed laser depositioncitations
- 2014Chemical and structural effects on ionic conductivity at columnar grain boundaries in yttria-stabilized zirconia thin filmscitations
- 2013Columnar grain boundary coherence in yttria-stabilized zirconia thin film: effects on ionic conductivitycitations
- 2013Unusual 90°domain structure in (2/3)Bi(Zn1/2Ti 1/2)O3-(1/3)BiFeO3 epitaxial films with giant 22% tetragonal distortioncitations
- 2007“Crystal structure and microstructure of epitaxial Pb(Zr,Ti)O3 films consisting of mixed phases with tetragonal and rhombohedral symmetries grown on (100)cSrRuO3//(100)SrTiO3 substrate by metalorganic chemical vapor deposition”
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article
Columnar grain boundary coherence in yttria-stabilized zirconia thin film: effects on ionic conductivity
Abstract
This study elucidated the effects of coherence of grain boundary of 6 mol% Y2O3-doped ZrO2 (YSZ) thin films on ionic conductivity. The YSZ thin films were deposited with several orientation textures on MgO (100) and Al2O3 (102) substrates using metal-organic chemical vapor deposition (MOCVD). Impedance measurements revealed that the total ionic conductivity of the thin films was restricted by the columnar grain boundary. The orientation degree, defined by the average full width at half maximum (FWHM) of 100 pole of the YSZ thin films, mainly determines the ionic conductivity across the columnar grain boundary because of the degree of the crystallographic coherence. Films with a strongly oriented columnar structure showed ionic conductivity of about 30 times higher than that of nanocrystalline films having random orientation. The activation energy of the ionic conduction across the columnar grain boundaries simply increased concomitantly with decreasing degree of orientation of the columnar grains of the films. HRTEM analyses revealed that the small tilt angle grain boundary with low lattice defect density and with no second phase at grain boundaries showed superior properties. Consequently, a columnar structure with high coherence is preferred for use as a thin film ionic conductor.