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| Naji, M. |
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| Motta, Antonella |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Petrov, R. H. | Madrid |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Kaszyca, Kamil
Institute of Electronic Materials Technology
in Cooperation with on an Cooperation-Score of 37%
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Publications (5/5 displayed)
- 2024Using SPS Sintering System in Fabrication of Advanced Semiconductor Materials
- 2022Thermoelectric properties of bismuth-doped magnesium silicide obtained by the self-propagating high-temperature synthesiscitations
- 2019Experimental and numerical studies of micro- and macromechanical properties of modified copper–silicon carbide compositescitations
- 2017Synthesis and characterization of antimony telluride for thermoelectric And optoelectronic applicationscitations
- 2017Microstructure and Thermal Properties of Cu-SiC Composite Materials Depending on the Sintering Techniquecitations
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document
Using SPS Sintering System in Fabrication of Advanced Semiconductor Materials
Abstract
The interest in the Spark Plasma Sintering (SPS) technique has continuously increased over the last few years. This article shows the possibility of the development of a SPS device used for material processing and synthesis both in both scientific and industrial applications. This work presents an example of processing Arc-Meleted (half-Heusler, cobalt triantimonide) and SHS-synthesized semiconductors (bismuth telluride) materials with SPS device. The system functionalities expansion is presented, showing the possible way of increasing the information amount obtained about SPS processes and using the SPS apparatus for conducting synthesis of materials and increasing reproducibility and accuracy of process parameters control.