| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Smirnova, Irina
Hamburg University of Technology
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2024Exploring pNIPAM lyogels : experimental study on swelling equilibria in various organic solvents and mixtures, supported by COSMO-RS analysis
- 2024Hydrophobic aerogels from vinyl polymers derived from radical polymerization : proof of conceptcitations
- 2023A greener approach for synthesizing metal-decorated carbogels from alginate for emerging technologiescitations
- 2023Formation of ohmic contacts to n-Alx Ga1-xN:Si layers with a high aluminum content
- 2022Scale-up of aerogel manufacturing plant for industrial production
- 2022Organic bio-based aerogel from food waste: preparation route and surface modification
- 2021Metal-doped carbons from polyurea-crosslinked alginate aerogel beadscitations
- 2020Ca-Zn-Ag Alginate Aerogels for Wound Healing Applications: Swelling Behavior in Simulated Human Body Fluids and Effect on Macrophages
- 2016Mesoporous guar galactomannan based biocomposite aerogels through enzymatic crosslinking
- 2015Hybrid alginate based aerogels by carbon dioxide induced gelation: novel technique for multiple applications
Places of action
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article
Formation of ohmic contacts to n-Alx Ga1-xN:Si layers with a high aluminum content
Abstract
The paper describes the results of optimizing rapid thermal annealing (RTA) of ohmic contacts to AlGaN:Si layers with a high aluminum content (70 mol%) and various electron concentration. The contact characteristics were measured using the transmission line method (TLM). It has been found that for highly doped Al0.7Ga0.3N:Si layers (>1018cm-3), the RTA annealing of Ti(25nm)/Al(80nm)/Ti/Au contact at a temperature 900 °C for 60 s makes it possible to obtain the minimum contact resistance of 8 Ω×mm and specific contact resistivity of 9×10-4 Ω·cm2 with high uniformity over the surface of a 2-inch substrate. For lightly doped Al0.7Ga0.3N:Si layers (<1017 cm-3), almost the same contact characteristics can be achieved at a higher RTA temperature of about 1000C and an increase in the thickness of the Al contact layer to 250 nm.