693.932 PEOPLE
| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Malyshev, Oleg
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2024V₃Si: an alternative thin film material for superconducting RF cavities
- 2024Upgraded multiprobe sample inserts for thin film SRF cavity developments
- 2024A high throughput facility for the RF characterisation Of planar superconducting thin films
- 2023V3Si Thin Films for SRF Applications
- 2023The effect of small bends in thin non-evaporable getter coated tubes on the partial pressure ratio as a function of sticking probability
- 2023Deposition and Characterisation of V₃Si films for SRF Applications
- 2022A First 6 GHz Cavity Deposition with B1 Superconducting Thin Film at ASTeC
- 2019PVD Depostion of Nb₃Sn Thin Film on Copper Substrate from an Alloy Nb₃Sn Target
- 2019Impact of the Cu Substrate Surface Preparation on the Morphological, Superconductive and RF Properties of the Nb Superconductive Coatings
- 2017Atomic Layer Deposition of Niobium Nitride from Different Precursors
Places of action
| Organizations | Location | People |
|---|
document
V₃Si: an alternative thin film material for superconducting RF cavities
Abstract
Superconducting materials, like V3Si, NbN, NbTiN and Nb3Sn, are potential alternatives to Nb for next generation thin film SRF cavities. In comparison to the Nb, their relatively high Tc could allow for operation at higher temperatures (≥ 4 K) and the higher critical field could lead to for higher accelerating gradients. We investigate optimum deposition parameters and substrates for V3Si, using single target physical vapor deposition (PVD). We report on the superconducting properties such as Tc and surface resistance using RRR and low power RF, stoichiometry using RBS, SIMS, XPS and EDX and surface quality using AFM and white light interferometry.