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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Fabbri, Filippo
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (12/12 displayed)
- 2024Influence of the Carrier Gas Flow in the CVD Synthesis of 2-Dimensional MoS2 Based on the Spin-Coating of Liquid Molybdenum Precursorscitations
- 2022In-vivo, in-situ, light-tunable manipulation of cells' biomechanics on a photoactive azobenzene bio-substrate
- 2022Optically tunable metal-dielectric diffractive structurescitations
- 20223D arrangement of epitaxial graphene conformally grown on porousified crystalline SiCcitations
- 2020Ultrafast, Zero-Bias, Graphene Photodetectors with Polymeric Gate Dielectric on Passive Photonic Waveguides.
- 2020Transforming colloidal Cs4PbBr6 nanocrystals with poly(maleic anhydride-alt-1-octadecene) into stable CsPbBr3 perovskite emitters through intermediate heterostructurescitations
- 2020Effect of Chemical Vapor Deposition WS2 on Viability and Differentiation of SH-SY5Y Cellscitations
- 2019Wafer-Scale Synthesis of Graphene on Sapphire: Toward Fab-Compatible Graphenecitations
- 2019Wafer-Scale Synthesis of Graphene on Sapphire: Toward Fab-Compatible Graphenecitations
- 2016Controlling the Surface Energetics and Kinetics of Hematite Photoanodes Through Few Atomic Layers of NiO xcitations
- 2009Growth and characterization of b-SiC and SiO2/b-SiC core-shell nanowires
- 2009βC-SiC/SiO2 core-shell nanowires studied by TEM and SEM-CL
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article
Ultrafast, Zero-Bias, Graphene Photodetectors with Polymeric Gate Dielectric on Passive Photonic Waveguides.
Abstract
We report compact, scalable, high-performance, waveguide integrated graphene-based photodetectors (GPDs) for telecom and datacom applications, not affected by dark current. To exploit the photothermoelectric (PTE) effect, our devices rely on a graphene/polymer/graphene stack with static top split gates. The polymeric dielectric, poly(vinyl alcohol) (PVA), allows us to preserve graphene quality and to generate a controllable p-n junction. Both graphene layers are fabricated using aligned single-crystal graphene arrays grown by chemical vapor deposition. The use of PVA yields a low charge inhomogeneity ∼8 × 1010 cm-2 at the charge neutrality point, and a large Seebeck coefficient ∼140 μV K-1, enhancing the PTE effect. Our devices are the fastest GPDs operating with zero dark current, showing a flat frequency response up to 67 GHz without roll-off. This performance is achieved on a passive, low-cost, photonic platform, and does not rely on nanoscale plasmonic structures. This, combined with scalability and ease of integration, makes our GPDs a promising building block for next-generation optical communication devices.