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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Strain, Michael
University of Strathclyde
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2020High-Throughput Electrical Characterization of Nanomaterials from Room to Cryogenic Temperatures.
- 2020Gallium nitride micro-light-emitting diode structured light sources for multi-modal optical wireless communications systemscitations
- 2020Gigabit per second visible light communication based on AlGaInP red micro-LED micro-transfer printed onto diamond and glasscitations
- 2020Automated nanoscale absolute accuracy alignment system for transfer printingcitations
- 2019Hyperspectral imaging under low illumination with a single photon cameracitations
- 2019Gallium nitride micro-LED drive circuits for visible light communications
- 2014Integrated microspectrometer with elliptical Bragg mirror enhanced diffraction grating on silicon on insulatorcitations
- 2012Bistable micro-ring lasers with compact footprint and high output efficiencycitations
- 2012Photo-induced trimming of chalcogenide-assisted silicon photonic circuits
- 2007Integrated chirped Bragg gratings for dispersion control
Places of action
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article
High-Throughput Electrical Characterization of Nanomaterials from Room to Cryogenic Temperatures.
Abstract
We present multiplexer methodology and hardware for nanoelectronic device characterization. This high-throughput and scalable approach to testing large arrays of nanodevices operates from room temperature to milli-Kelvin temperatures and is universally compatible with different materials and integration techniques. We demonstrate the applicability of our approach on two archetypal nanomaterials-graphene and semiconductor nanowires-integrated with a GaAs-based multiplexer using wet or dry transfer methods. A graphene film grown by chemical vapor deposition is transferred and patterned into an array of individual devices, achieving 94% yield. Device performance is evaluated using data fitting methods to obtain electrical transport metrics, showing mobilities comparable to nonmultiplexed devices fabricated on oxide substrates using wet transfer techniques. Separate arrays of indium-arsenide nanowires and micromechanically exfoliated monolayer graphene flakes are transferred using pick-and-place techniques. For the nanowire array mean values for mobility μFE = 880/3180 cm2 V-1 s-1 (lower/upper bound), subthreshold swing 430 mV dec-1, and on/off ratio 3.1 decades are extracted, similar to nonmultiplexed devices. In another array, eight mechanically exfoliated graphene flakes are transferred using techniques compatible with fabrication of two-dimensional superlattices, with 75% yield. Our results are a proof-of-concept demonstration of a versatile platform for scalable fabrication and cryogenic characterization of nanomaterial device arrays, which is compatible with a broad range of nanomaterials, transfer techniques, and device integration strategies from the forefront of quantum technology research.